SS8050

TRANSISTOR (NPN)

FEATURES

Complimentary to SS8550

MARKING :Y1

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Co

llector-base breakdow n voltage

V

(B

R)CBO

I

C

=

100μA, I

E

=0 40

V

Co

llector-emitter breakdown voltage

V

(B

R)CEO

I

C

=

0.1mA, I

B

=0 25

V

Emitter-b

ase breakdown voltage

V

(

BR)EBO

I

E

=

100μA, I

C

=0 5

V

Co

llector cut-off current

I

CB

O

V

CB

=

40V, I

E

=

0 0.1 μA

Co

llector cut-off current

I

CE

O

V

CE

=

20V, I

E

=

0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

= 5

V, I

C

=

0 0.1 μA

h

FE(1)

V

CE

=1

V, I

C

=

100mA 120 400

DC cu

rrent gain

h

FE(2)

V

CE

=1

V, I

C

=

800mA 40

Co

llector-emitter saturation voltage

V

CE

(sat)

I

C

=

800mA, I

B

=

80mA 0.5 V

Bas

e-emitter saturation voltage

V

BE(

sat)

I

C

=

800mA, I

B

=

80mA 1.2 V

T

ransition frequency

f

T

V

CE

=

10V, I

C

=

50mA,

f=30MHz

100 MHz

Co

llector output capacitance

C

ob

V

CB

=

10V,I

E

=

0,f=1MHz 15 pF

CLASSIFICA

TION OF h

FE

(1)

Rank L H J

Range

120-

200 200-350 300-400

SOT-323

1. BASE

2

. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 40

V

V

CEO

Collector-Emitter Voltage 25

V

V

EBO

Emitter-Base Voltage 5

V

I

C

Collector Current 1.5 A

P

C

Collector Power Dissipation 250 mW

R

ΘJA

Thermal Resistance From Junction To Ambient

500 ℃/W

Operation Junction and

Storage Temperature Range

T

J

,T

stg

-55～+150 ℃

１　

Ｄａｔｅ：２０２１／１０

www.htsemi.com

semiconductor

JinYu

Typical Characteristics

SS8050

２

Ｄａｔｅ：２０２１／１０

www.htsemi.com

semiconductor

JinYu