S9014W

TRANSISTOR (NPN)

FEATURES

 Complementary to S9015W

 Small Surface Mount Package

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 50 V

V

CEO

Collector-Emitter Voltage 45 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 100 mA

P

C

Collector Power Dissipation 200 mW

R

ΘJA

Thermal Resistance From Junction To Ambient 625

℃/W

Operation Junction and

Storage Temperature Range

℃

T

J

,T

stg

-55～+150

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

=100µA, I

E

=0 50 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=100µA, I

B

=0 45 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=100µA, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=50V, I

E

=0 100 nA

Collector cut-off current

I

CEO

V

CE

=35V, I

B

=0 1 uA

Emitter cut-off current

I

EBO

V

EB

=4V, I

C

=0 100 nA

DC current gain

h

FE

V

CE

=5V, I

C

=1mA 200 1000

Collector-emitter saturation voltage

V

CE(sat)

I

C

=100mA, I

B

=5mA 0.3 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=100mA, I

B

=5mA 1 V

Base-emitter voltage

V

BE

V

CE

=5V, I

C

=2mA 0.58 0.7 V

Transition frequency

f

T

V

CE

=5V,I

C

=10mA , f=30MHz 150 MHz

Collector output capacitance

C

ob

V

CB

=10V, I

E

=0, f=1MHz 3.5 pF

CLASSIFICATION OF h

FE

RANK L H

RANGE 200–450 450–1000

MARKING

J6

SOT–323

1. BASE

2. EMITTER

3. COLLECTOR

１　

Ｄａｔｅ：２０２１／１０

www.htsemi.com

semiconductor

JinYu

：

0.1 1 10

0.1

1

10

100

0 25 50 75 100

125 150

0

50

100

150

200

250

0.0 0

.3 0.6 0.9 1.2

0.1

1

10

100

024

68

0

2

4

6

8

0.1 1 10 100

0.1

1

0.1 1 10 100

10

100

1000

0.1 1 10 100

0.01

0.1

1

0.1 1 10 100

1

10

100

1000

f=1M

Hz

I

E

=0/I

C

=0

T

a

=25

℃

V

CB

/ V

EB

C

ob

/ C

ib

—

—

C

ob

C

ib

CAPACIT

ANCE C (pF)

REVERSE VO

LTAGE V

R

(V)

P

C

—

— T

a

CO

LLECTOR POWER DISSIPATION

P

C

(mW)

AM

BIENT TEMPERATURE T

a

(

)

℃

COM

MON EMITTER

V

CE

= 5V

V

BE

I

C

—

—

T

a

=100

℃

T

a

=25

℃

COLLECTOR CURRENT I

C

(mA)

BASE-

EM

M

I

T

ER VO

LTAGE V

BE

(V)

20uA

C

OMMON

EMITTER

T

a

=25

℃

18uA

16uA

14uA

12uA

10uA

8uA

6uA

4uA

I

B

=2uA

S

t

at

i

c

C

h

aracteristic

COLLECTOR CURRENT I

C

(mA)

COLLECTOR-EM

ITTER VOLTAGE V

CE

(V)

20

f

T

—

—

h

FE

—

—

β=20

I

C

V

B

Esat

—

—

T

a

=100

℃

T

a

=25

℃

BASE-

EMITTER SATURATION

VOLTAGE V

BEs

at

(V)

COLLECTOR CURRENT I

C

(m

A)

2

COM

MON EMITTER

V

CE

= 5V

I

C

I

C

T

a

=25

℃

T

a

=100

℃

DC CURRENT GAIN h

FE

COLLECTOR CURRENT I

C

(m

A)

β=20

T

a

=100

℃

T

a

=25

℃

I

C

V

C

Esat

—

—

COLLECTOR-EMITTER SATURATION

VO

LTAGE V

CE

sat

(V)

COLLECTOR CURRENT I

C

(m

A)

COM

MON EMITTER

V

CE

=5V

T

a

=25

℃

TRA

NSITION FREQUENCY f

T

(MHz

)

COLLECTOR CURRENT I

C

(m

A)

T

ypical Characteristics

S9014W

２

Ｄａｔｅ：２０２１／１０

www.htsemi.com

semiconductor

JinYu