S9012
W
T
R
ANSIST
OR
(PNP)
FEA
T
URES
z
Complement
ary to S9013W
z
Excellent h
FE
linearity
MARKING :2T1
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Para
meter
Symbol Test conditions Min Typ Max Unit
Co
llector-base breakdown voltage
V
(BR)CBO
I
C
=
-100
μ
A, I
E
=0
-40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, I
B
=
0 -25 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-100
μ
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=
-40V, I
E
=0 -0
.1
μ
A
Co
llector cut-off current
I
CEO
V
CE
=-20V, I
B
=0 -0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5
V, I
C
=0 -0
.1
μ
A
DC cu
rrent gain
h
FE
V
CE
=-1
V, I
C
=
-50mA 120 400
Co
llector-emitter saturation voltage
V
CE
(sat) I
C
=
-500mA, I
B
= -50mA -0.6
V
Bas
e-emitter saturation voltage
V
BE
(sat) I
C
=
-500mA, I
B
= -50mA -1.2
V
T
ransition frequency
f
T
V
CE
=-6
V, I
C
=
-20mA,
f=
30MHz
150 MHz
Co
llector output capacitance
C
ob
V
CB
=
-10
V,
I
E
=0,f=
1
MHz
5
pF
CLASSIFIC
ATION OF h
FE
Rank
L H J
Range
120-
200 200-350 300-400
SOT-323
1. BASE
2
. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40
V
V
CEO
Collector-Emitter Voltage -25
V
V
EBO
Emitter-Base Voltage -5
V
I
C
Collector Current -500 mA
P
C
Collector Power Dissipation 200 mW
R
ΘJA
Thermal Resistance From Junction To Ambient
625 ℃/W
Operation Junction and
Storage Temperature Range
T
J
,T
stg
-55～+150 ℃
１
Ｄａｔｅ：２０２１／１０
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semiconductor
JinYu
-1 -1
0 -100
10
100
1000
-1 -1
0 -100
-1
-10
-100
-1000
-0
.1 -1 -10
1
-1
0 -100
10
0 25 50 75 100
125 150
0
50
100
150
200
250
-0
.0 -0.2 -0.4 -0.6 -0.8 -1.0
-0.1
-1
-10
-100
-1 -1
0 -100
-0.0
-0.4
-0.8
-1.2
-0 -1 -2 -3 -4 -5
-0
-2
0
-40
-60
-80
f
T
—
— I
C
h
FE
—
—
COM
MON EMITTER
V
CE
=-1V
-5
00
T
a
=100
℃
T
a
=25
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
I
C
COLLECTOR-EMITTER SATURATION
VO
LTAGE V
CE
sat
(mV)
COLLECTOR CURRENT I
C
(m
A)
β=10
T
a
=25
℃
T
a
=100
℃
I
C
V
C
Esat
—
—
-
500
1000
100
-
500
100
10
-20
Cob
Cib
REVERSE VO
LTAGE V (V)
f=1M
Hz
I
E
=0/I
C
=0
T
a
=25
℃
V
CB
/ V
EB
C
ob
/ C
ib
—
—
CAPACIT
ANCE C (pF)
-5
V
CE
=-6V
T
a
=25
℃
TRA
NSITION FREQUENCY f
T
(MHz
)
COLLECTOR CURRENT I
C
(m
A)
CO
LLECTOR POWER DISSIPATION
P
C
(mW)
AM
BIENT TEMPERATURE T
a
(
)
℃
P
C
—
— T
a
V
BE
I
C
—
—
T
a
=25
℃
T
a
=100
℃
COM
MON EMITTER
V
CE
=-1V
COLLECTOR CURRENT I
C
(mA)
BASE-
EMMITER VOLTAGE V
BE
(V)
β=10
BASE-
EMITTER SATURATION
VOLTAGE V
BEs
at
(V)
COLLECTOR CURRENT I
C
(m
A)
T
a
=25
℃
T
a
=100
℃
-
500
I
C
V
B
Esat
—
—
-
300uA
-
270uA
S
tatic Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
-
240uA
-
210uA
-
180uA
-
150uA
-
120uA
-
90uA
-
60uA
I
B
=-
30uA
C
OMMON
EMITTER
T
a
=25
℃
T
ypical Characteristics
S9012
W
２
Ｄａｔｅ：２０２１／１０
www.htsemi.com
semiconductor
JinYu