SEMICONDUCTOR
TECHNICAL DATA
GBU8005 ~ GBU810
2013. 04. 15 1/2Revision No : 0
Bridge Rectifier
■
Features
■
Outline Dimensions and Mark
● I
o
8A
●
V
RRM
50V~1000V
●
Glass passivated chip
●
High surge forward current capability
■
Applications
●
General purpose 1 phase Bridge
rectifier applications
■
Limiting Values（Absolute Maximum Rating）
GBU8
Item Symbol
Unit
Conditions
05
Repetitive Peak Reverse
Voltage
V
RRM
V
50 100 200 400 600 800 1000
With heatsink T
c
=80℃
8
Average Rectified Output
Current
I
O
A
60Hz sine wave,
R-load
Without heatsink T
a
=25℃
3.2
Surge(Non-
repetitive)Forward Current
I
FSM
A
60H
Z
sine wave, 1 cycle, T
j
=25℃
200
Current Squared Time
I
2
t
A
2
S
1ms≤t<8.3ms Tj=25℃，Rating of per diode
166
Storage Temperature
T
stg
℃
-55 ~+150
Junction Temperature
T
j
℃
-55 ~+150
Dielectric Strength
V
dis
KV
Terminals to case，AC 1 minute
2
Mounting Torque
Tor
kg·
cm
Recommend torque：5kg·cm
8
■
Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
Item
Symbol
Unit Test Condition
Max
Peak Forward Voltage
V
FM
V
I
FM
=4A, Pulse measurement, Rating of per diode
1.1
Peak Reverse Current
I
RRM
μA
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
10
R
θ
J-A
Between junction and ambient, Without heatsink
25
Thermal Resistance
R
θ
J-C
℃/W
Between junction and case, With heatsink
2.3
01
02
04
06 08 10
Unit:inch(mm)
GBU
87 (22.2)
860(21.8)
.139(3.53)
.133(3.37)
.752(19.1)
.720(18 3)
.720(18.29)
.680(17.27)
.0 7(1.2)
.035(0.9)
.073(1.85)
.057(1. 5)
3 2x3.2
CHAMFER
.232(5.9)
.22 (5.7)
.100(2.5 )
.085(2.16)
.080(2.03)
.065(1.65)
210
.190
.210
.190
.210
.190
(5.33)
( .83)
(5.33)
( .83)
(5 33)
( 83)
.022(0 56)
.018(0. 6)
.106(2.7)
.091(2.3)
10
YP
5
TYP
O
O
.15 (3.9)
.1 6(3.7)
AC +
-
2013. 04. 15 2/2Revision No : 0
SEVRUCCITSIRETCARAHCDNASGNITAR
(T
A
= 25
o
C unless otherwise noted)
GBU8005 ~ GBU810
80
0
Io(A)
Tc(℃)
FIG1:Io-Tc Curve
160
sine wave R-load
with heatsink
90 100 110 120 130 140 150
Tc
heatsink
2
4
6
8
10
70
11
0.4 0.6 0.8 1.0 1.2 1.4
0.1
0.2
0.5
VF(V)
IF(A)
FIG3: Forward Voltage
1.0
10
20
40
60
5.0
Ta=25℃
0 20 40 60 80 100
0.01
0.1
1.0
10
100
Voltage(%)
IR(uA)
Tj=150℃
Tj=25℃
FIG4:Typical Reverse Characteristics
1
0
IFSM(A)
2 5 10 20 50 100
100
200
300
sine wave
non-repetitive
Tj=25
℃
FIG2:Surge Forward Current Capadility
Number of Cycles
0
8.3ms
1cycle
IFSM
8.3ms