SEMICONDUCTOR
TECHNICAL DATA
PC817S
2013. 07. 30 1/4
Revision No : 0
High Density Mounting Type Photocoupler PC817 Series
■ Features
● Current transfer ratio
( CTR: MIN. 50% at I
F = 5mA ,VCE=5V)
● High isolation voltage between input and output
■ Absolute Maximum Ratings Ta = 25℃
SOP-4
1 2
34
1 Anode
2 Cathode
3 Emitter
4 Collector
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Parameter Symbol Rating Unit
Input Reverse voltage V
R 6
Collector - Emitter Output Voltage VCEO 35
Emitter-Collector Output Voltage V
ECO 6
Isolation Voltage V
ISO 5000
Input Forward Current I
F 50 mA
Input Peak Forward Current (Note.1) I
FM
1 A
Collector Current - Continuous I
C 50 mA
Input Power Dissipation P 70
Collector Output Power dissipation Pc 150
Total Power Dissipation P
tot 200
Junction Temperature T
J 125
Soldering temperature T
sol 260
Operating Temperature T
opr
-30 to 100
Storage Temperature Range T
stg
-55 to 125
℃
V
mW
Note.1:Pulse width≤100ms, Duty ratio : 0.001
Vrms
Unit:mm
2013. 07. 30 2/4
Revision No : 0
PC817S
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Input Forward Voltage V
F
I
F
= 20 mA 1.4
Input Peak Forward Voltage VFM IFM= 500 mA 3
Input Reverse Current I
R VR= 4 V 10
uA
Collector- emitter cut-off current I
CEO VCE= 20 V , IE= 0 10
Collector-emitter saturation voltage V
CE(sat)
I
F
= 20mA, I
C
= 1mA 0.1 0.2 V
Isolation resistance R
ISO
DC 500V, 40 to 60% RH 5 x 10
10
10
11
Ω
Current Transfer Ratio CTR V
CE
= 5V, I
F
= 5mA 50 600 %
Rise time t
r
4 18
Fall time t
f 3 18
Input Terminal Capacitance C
t 30 250
Floating Capacitance C
f 0.6 1
Cut-off frequency f
C
V
CE
= 5V, I
C
= 2mA,R
L
=100Ω 80 KHz
V
V= 0V, f=1KHz pF
V
CE = 2V, IC = 2mA, RL = 100Ω uS
■
Classification of CTR(%)
Type PC817A PC817B PC817C PC817D PC817
Range 80-160 130-260 200-400 300-600 50-600
■
Typical Characterisitics
0
25
30
0 25 50 75 100 125
40
50
60
20
10
Fig. 1 Forward Current vs.
Ambient Temperature
Ambient temperature T
a
(
C
)
Forward current I
F
(
mA
)