SEMICONDUCTOR
TECHNICAL DATA
MBR30100PT
2015. 6. 26 1/3
Revision No : 0
MBR30100PT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guardring for Overvoltage Protection
Low Power Loss,High Efficiency
High Surge Current Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25
℃ unless otherwise noted )
tinU eulaV retemaraP lobmyS
V
RRM
Peak repetitive reverse voltage
V
RWM
Working peak reverse voltage
V
R
DC blocking voltage
100
V
V
R(RMS)
V 07 egatlov esrever SMR
I
O
03 tnerruc tuptuo deifitcer egarevA
A
I
FSM
Non-repetitive peak forward surge current
8.3ms half sine wave
200 A
P
D
W 5.3 noitapissid rewoP
R
ΘJA
92 tneibma ot noitcnuj morf ecnatsiser lamrehT
℃/W
T
j
Junction temperature
125
℃
T
stg
Storage temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25 unless otherwise specified)
Parameter Symbol Test conditions Min
Typ
Max Unit
Reverse voltage
V
(BR)
I
R
=1mA 100
V
Reverse current
I
R
V
R
=100V
0.1 mA
V
F1
I
F
=15A
1
V
Forward voltage
V
F2
* I
F
=30A
1.05
V
Typical total capacitance
C
tot
V
R
=4V,f=1MHz 300
*Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
pF
MBR30100PT
2015. 6. 26 2/3
Revision No : 0
0 100 200 300 400 500 600 700 800 900 1000
1
10
100
1000
10000
20 40 60 80 100
0.1
1
10
100
1000
0 25 50 75 100 125
0
1
2
3
4
5
0 5 10 15 20 25 30 35
0
100
200
300
400
500
600
700
800
900
1000
30000
1
Forward Characteristics
FORWARD VOLTAGE V
F
(mV)
FORWARD CURRENT I
F
(mA)
T
a
=
2
5
℃
T
a
=1
0
0
℃
Reverse Characteristics
T
a
=25
℃
T
a
=100
℃
REVERSE CURRENT I
R
(uA)
REVERSE VOLTAGE V
R
(V)
Power Derating Curve
POWER DISS PATION P
D
(W)
AMBIENT TEMPERATURE T
a
( )℃
T
a
=25℃
f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERM NALS
C
T
(pF)
Typical Characteristics