MMDT2907A
Rev.C Oct.-2021 DATA SHEET
http://www.fsbrec.com 1 / 6
SOT-363 塑封封装双 PNP 半导体三极管。
Double silicon PNP transistor in a SOT-363 Plastic Package
集电极电流可达 600mA。无卤产品。
Collector currents to 600mA. HF Product.
用于普通放大。
General purpose amplifier.
PIN 1、4：Emitter PIN 2、5：Base PIN 3、6：Collector
放大及印章代码 / h
FE
Classifications & Marking
See
Marking Instructions
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
MMDT2907A
Rev.C Oct.-2021 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
-60 V
Collector to Emitter Voltage
V
CEO
-60 V
Emitter to Base Voltage V
EBO
-5.0 V
Collector Current I
C
-600 mA
Collector Power Dissipation P
C
350 mW
Junction Temperature
T
j
150 ℃
Storage Temperature Range
T
stg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base
Breakdown
Voltage
V
CBO
I
C
=-10μA I
E
=0 -60 V
Collector to Emitter
Breakdown
Voltage
V
CEO
I
C
=-10mA I
B
=0 -60 V
Emitter to Base
Breakdown
Voltage
V
EBO
I
E
=-10μA I
C
=0 -5.0
V
Collector Cut
-Off Current I
CBO
V
CB
=-50V I
E
=0 -0.01
μA
DC Current Gain
h
FE(1)
V
CE
=-10V I
C
=-150mA* 100
300
h
FE(2)
V
CE
=-10V I
C
=-500mA* 50
h
FE(3)
V
CE
=-10V I
C
=-10mA 100
h
FE(4)
V
CE
=-10V I
C
=-1.0mA
100
h
FE(5)
V
CE
=-10V I
C
=-0.1mA
75
Collector
-Emitter Saturation
V
oltage
V
CE(sat) (1)
I
C
=-150mA I
B
=-15 mA -0.4 V
V
CE(sat) (2)
I
C
=-500mA I
B
=-50mA -1.6 V
Base
-Emitter Saturation Voltage
V
BE(sat) (1)
I
C
=-150mA I
B
=-15 mA -1.3 V
V
BE(sat) (2)
I
C
=-500mA I
B
=-50mA -2.6 V
Transition Frequency
f
T
V
CE
=-20V I
C
=-50mA
f=100MHz
200
MHz
Output Capacitance
C
ob
V
CB
=-10V I
E
=0
f=1.0MHz
8.0 pF
Turn
–On Time t
on
V
CC
=-30V
I
C
=-150mA
I
B1
=-15mA
50 ns
Turn
–Off Time t
off
V
CC
=-30V
I
C
=-150mA
I
B1
=I
B2
=-15mA
100 ns
*Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)