MMDT3904
Rev.C Oct.-2021 DATA SHEET
http://www.fsbrec.com 1 / 6
SOT-363 塑封封装双 NPN 半导体三极管。
Double silicon NPN transistor in a SOT-363 Plastic Package.
低电压，低电流。无卤产品。
Low current, Low voltage。HF Product.
用于普通放大及开关。
General purpose amplifier and switching.
PIN 1、4：Emitter PIN 2、5：Base PIN 3、6：Collector
放大及印章代码 / h
FE
Classifications & Marking
See
Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
MMDT3904
Rev.C Oct.-2021 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
60 V
Collector to Emitter Voltage
V
CEO
40 V
Emitter to Base Voltage V
EBO
6.0 V
Collector Current I
C
200 mA
Collector Power Dissipation
P
C
200 mW
*P
C
350 mW
Junction Temperature
T
j
150 ℃
Storage Temperature Range
T
stg
-55～150 ℃
*在 7×5×0.6mm 陶瓷板上 *When mounted on a 7×5×0.6mm ceramic board
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base
Breakdown
Voltage
V
CBO
I
C
=10μA I
E
=0
60 V
Collector to Emitter
Breakdown
Voltage
V
CEO
I
C
=1.0mA I
B
=0 40 V
Emitter to Base
Breakdown
Voltage
V
EBO
I
E
=10μA I
C
=0 6.0 V
Collector Cut
-Off Current I
CBO
V
CB
=30V I
E
=0 0.05
μA
Emitter Cut
-Off Current I
EBO
V
EB
=3.0V I
C
=0
0.05
μA
DC Current Gain
h
FE(1)
V
CE
=1.0V I
C
=10mA 100
300
h
FE(2)
V
CE
=1.0V I
C
=100mA
30
h
FE(3)
V
CE
=1.0V I
C
=50mA 60
h
FE(4)
V
CE
=1.0V I
C
=1.0mA
70
h
FE(5)
V
CE
=1.0V I
C
=0.1mA 40
Collector
-Emitter Saturation
V
oltage
V
CE(sat)(1)
I
C
=10mA I
B
=1.0mA
0.2 V
V
CE(sat)(2)
I
C
=50mA I
B
=5.0mA 0.3 V
Base
-Emitter Saturation Voltage
V
BE(sat)(1)
I
C
=10mA I
B
=1.0mA
0.65
0.85
V
V
BE(sat) (2)
I
C
=50mA I
B
=5.0mA 0.95
V
Transition Frequency
f
T
V
CE
=20V
I
C
=10mA
f=100MHz
300
MHz
Output Capacitance
C
ob
V
CB
=5.0V f=1.0MHz 4.0 pF
Storage Time
t
stg
V
CC
=3.0V I
C
=10mA
I
B1
=-I
B2
=1.0mA
200 ns
Fall
Time t
f
V
CC
=3.0V
I
C
=10mA
I
B1
=-I
B2
=1.0mA
50 ns
Delay
Time t
d
V
CC
=3.0V
V
BE
=0.5V
I
C
=10mA I
B1
=1.0mA
35 ns
Rise
Time t
r
V
CC
=3.0V
V
BE
=0.5V
I
C
=10mA I
B1
=1.0mA
35 ns
Input Capacitance
C
ib
V
EB
=0.5V f=1.0MHz 8.0 pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)