MMDT5551
Rev.D Oct.-2021 DATA SHEET
http://www.fsbrec.com 1 / 6
SOT-363 塑封封装双 NPN 半导体三极管。
Double silicon NPN transistor in a SOT-363 Plastic Package.
击穿电压高,可与 MMDT5401 互补。无卤产品。
High voltage, complementary pair with MMDT5401. HF Product.
用于普通高压放大。
General purpose high voltage amplifier.
PIN1、4：Emitter PIN 2、5：Base PIN 3、6：Collector
放大及印章代码 / h
FE
Classifications & Marking
See
Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
MMDT5551
Rev.D Oct.-2021 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
180 V
Collector to Emitter Voltage
V
CEO
160 V
Emitter to Base Voltage V
EBO
6.0 V
Collector Current I
C
600 mA
Base Current I
B
300 mA
Collector Power Dissipation P
C
500 mW
Junction Temperature
T
j
150 ℃
Storage Temperature Range
T
stg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut
-Off Current I
CBO
V
CB
=180V I
E
=0 0.1 μA
Emitter Cut
-off Current I
EBO
V
EB
=6.0V I
C
=0 0.1 μA
DC Current Gain
h
FE(1)
V
CE
=5.0V I
C
=10mA 100
300
h
FE(2)
V
CE
=5.0V I
C
=50mA 20 160
h
FE(3)
V
CE
=5.0V I
C
=1.0mA 40 190
Collector
-Emitter Saturation
V
oltage
V
CE(sat) (1)
I
C
=10mA I
B
=1.0mA 0.06
0.15
V
V
CE(sat) (2)
I
C
=50mA I
B
=5.0mA 0.09
0.3 V
Base
-Emitter Saturation Voltage
V
BE(sat) (1)
I
C
=10mA I
B
=1.0mA 0.7 1.0 V
V
BE(sat) (2)
I
C
=50mA I
B
=5.0mA 0.8 1.0 V
Base
-Emitter Voltage V
BE
V
CE
=5.0V I
C
=10mA 0.68
0.75
V
Transition Frequency
f
T
V
CE
=10V I
C
=10mA 50 110 MHz
Collector
Output Capacitance C
ob
V
CB
=10V
I
E
=0
f=1.0MHz
2.2 5.0 pF
Turn
-on Time t
on
I
C
=100mA
I
B1
=-I
B2
=10mA
0.3 μs
Turn
-off Time t
off
0.4 μs
Storage
Time t
stg
0.2 μs
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)