120m2.0A4.5V
90m310V
60
2020-6-29
60V/3A N-Channel Enhancement-Mode POWER MOSFET
PT2308
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃
A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Parameter Rating
Drain-Source Voltage 60
Gate-Source Voltage ±20
Continuous Drain Current
3
, V
GS
@ 4.5V
3
Pulsed Drain Current
1,2
10
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Thermal Data
Parameter
Storage Temperature Range
1 -
-
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VDS= V
RDS(ON), Vgs@ . , Ids@ .0A <
RDS(ON) Vgs@ , Ids@ <
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
5030
0080
Millimeter
Millimet
er
REF.
Min.
Max.
REF.
Min. Max.
A 2. 3. G
B 2. 2. H 0.90 1.1
C 1.20 1.40 K 0.10 0.20
D 0.30 0.50 J 0.35
E 0 0.10 L 0.92
F 0.45 0.55 M 0° 10°
SOT-23
1.80
2.00
0.70
0.98
D
G
S
ΩΩΩ
ΩΩΩ
=3A - 6
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA 60 - - V
ΔBV
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA - 0.05 - V/℃
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=10V, I
D
=3A - - 90 mΩ
V
GS
=4.5V, I
D
=2A - - 120 mΩ
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 1 - 2 V
g
fs
Forward Transconductance V
DS
=5V, I
D
=3A - 5 - S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=48V, V
GS
=0V - - 10
uA
I
GSS
Gate-Source Leakage V
GS
=±20V - - ±100
nA
Q
g
Total Gate Charge
2
I
D
nC
Q
gs
Gate-Source Charge V
DS
=48V - 1.6 -
nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=4.5V - 3 -
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=30V - 6 -
ns
t
r
Rise Time I
D
=1A - 5 -
ns
t
d(off)
Turn-off Delay Time R
G
=3.3Ω,V
GS
=10V - 16 -
ns
t
f
Fall Time R
D
=30Ω -3-
ns
C
iss
Input Capacitance V
GS
=0V - 490 780
pF
C
oss
Output Capacitance V
DS
=25V - 55 -
pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 40 -
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.2A, V
GS
=0V - - 1.2 V
t
rr
Reverse Recovery Time
I
S
=3A, V
GS
=0V, - 25 -
ns
Q
rr
Reverse Recovery Charge dI/dt=100A/µs - 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
60V/3A N-Channel Enhancement-Mode POWER MOSFET
PT2308
2020-6-29
2 -
-
www.puolop.com