SWITCHING
DIODE
FEATURES
z Low T urn-on voltage
z
Fast sw
itching
z
Also available in lead free
version
BAS70
Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76
MAXIMUM RA
TINGS @T
A
=25
℃
S
ymbol Parameter
V
alue Units
V
R
DC V
oltage
70 V
I
F
Forwar
d Continuous Current
70 mA
P
D
Power dissip
ation
200 mW
T
J
Junction T
emperature
150
℃
T
stg
Storage Temperature
-55-150
℃
ELECTRICAL
CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Re
verse breakdow n voltage
V
(B
R) R
I
R
= 10µA 70 V
Reverse voltage leakage current
I
R
V
R
=
50V 120 nA
Forward voltage
V
F
I
F
=1
mA
I
F
=
15mA
410
1000
mV
Dio
de capacitance
C
D
V
R
=0V f=1MHz 2 pF
Re
veres recovery time
t
rr
I
F
=I
R
=
10mA,I
rr
=0.
1xI
R
,
R
L
=
100Ω
5 nS
SOT
-23
BAS7 0/-04/-05/-
06
１
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
T
ypical Characteristics
２
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
BAS7 0/-04/-05/-
06