RU3070L
N-Channel Advanced Power MOSFET
Pin DescriptionFeatures
• 30V/70A,
R
DS (ON)
=3.3mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=5mΩ(Typ.)@V
GS
=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
D
Applications
TO252
•
100%
ava
l
anc
h
e
t
es
t
e
d
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
D
pp
N Channel MOSFET
• Load Switch
D
S
G
Symbol Rating Unit
V
DSS
30
Absolute Maximum Ratings
N
-
Ch
anne
l
MOSFET
Parameter
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
Drain-Source Voltage
V
D
S
G
DSS
V
GSS
±20
T
J
175 °C
T
STG
-55 to 175 °C
I
S
T
C
=25°C
70 A
g
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
D
S
G
I
DP
①
T
C
=25°C
280 A
T
C
=25°C
70
T
C
=100°C
49
T
C
=25°C
71
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
M
a
xim
u
m P
o
w
e
r Di
ss
i
pat
i
o
n
M
oun
t
e
d
on
L
arge
H
ea
t
Si
n
k
I
D
②
A
P
D
W
D
S
G
T
C
=100°C
36
R
JC
2.1 °C/W
R
JA
100 °C/W
E
AS
③
196 mJ
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
A
valanche Ener
gy
, Sin
g
le Pulsed
Maximum
Power
Dissipation
P
D
W
Thermal Resistance-Junction to Ambient
D
S
G
E
AS
196
mJ
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
1 www.ruichips.com
a a c e e gy, S g e u sed
D
S
G
RU3070L
El t i l Ch t i ti
Min. Typ. Max.
BV
DSS
Drain-Source Breakdown Voltage 30 V
El
ec
t
r
i
ca
l
Ch
arac
t
er
i
s
ti
cs (T
C
=25°C Unless Otherwise Noted)
Static Characteristics
Symbol Parameter Test Condition
RU3070L
Unit
V
GS
=0V, I
DS
=250µA
V
30V V
0V
1
T
J
=125°C
30
V
GS(th)
Gate Threshold Voltage 1 3 V
I
GSS
Gate Leakage Current ±100 nA
3.3 4.3 mΩ
6
Ω
R
DS(ON)
④
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=70A
V
GS
=±20V, V
DS
=0V
V
45V I
56A
V
DS
=V
GS
, I
DS
=250µA
I
DSS
Zero Gate Voltage Drain Current
V
DS
=30V, V
GS
=0V
µA
56mΩ
V
SD
④
Diode Forward Voltage 1.2 V
trr
Reverse Recovery Time 35 ns
Qrr
Reverse Recovery Charge 23 nC
R
DS(ON)
I
SD
=70A, V
GS
=0V
I
SD=70A, dlSD/dt=100A/µs
V
GS
=4.5V, I
DS
=56A
Diode Characteristics
R
G
Gate Resistance 1.9 Ω
C
iss
Input Capacitance 2200
C
oss
Output Capacitance 370
C
rss
Reverse Transfer Capacitance 250
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
pF
Dynamic Characteristics
⑤
t
d(ON)
Turn-on Delay Time 7
t
r
Turn-on Rise Time 12
t
d(OFF)
Turn-off Delay Time 28
t
f
Turn-off Fall Time 11
V
DD
=15V, I
DS
=70A,
V
GEN
=10V, R
G
=5Ω
Gate Char
g
e Characteristics
⑤
ns
Q
g
Total Gate Charge 32
Q
gs
Gate-Source Charge 5
Q
gd
Gate-Drain Charge 10
Notes:
V
DS
=24V, V
GS
=10V,
I
DS
=70A
①Pulse width limited by safe operating area.
Gate
Charge
Characteristics
nC
Notes:
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by T
Jmax
, I
AS
=28A, V
DD
= 24V, R
G
= 50Ω , Starting T
J
= 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
2 www.ruichips.com