Complementary to SS8550S

120-200 200-350 300-400

SS8 050S

FEATURES

MARKING: Y1 1

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage

V

CEO

Collector-Emitter Voltage

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current -Continuous 1.5 A

P

C

Collector Power Dissipation 0.3 W

T

j

Junction Temperature 150

℃

T

stg

Storage Temperature -55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

I

C

= 100 A, I

E

=0 25 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C B

=0 20 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=100 A, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=25V, I

E

=0 0.1 A

Collector cut-off current

I

CEO

V

CB

=20V, I

B

=0 0.1 A

Emitter cut-off current

I

EBO

V

EB

= 5V, I

C

=0 0.1 A

h

FE(1)

V

CE

=1V, I

C

= 100mA

DC current gain

h

FE(2)

V

CE

=1V, I

C

= 800mA 40

Collector-emitter saturation voltage

V

CE(sat)

I

C

=800mA, I

B

= 80mA 0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=800mA, I

B

= 80mA 1.2 V

Transition frequency

f

T

V

CE

=10V, I

C

= 50mA

f=30MHz

100 MHz

CLASSIFICATION OF h

FE

(1)

Rank L H J

Range

V

25

V

20

85

400

V

V

SO

T

-23

1. BASE

2. EMITTER

3. COLLECTOR

TRANSISTOR(NPN)

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semiconductor

JinYu

= 1mA, I

Typical characteristics

SS8 050S

TRANSISTOR(NPN)

２　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu