= -1mA 200 400
200-400 300-400
TRANSISTOR(PNP)
FEATURES
z
Complementary to S9014
MARKING:
M6
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -45 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -0.1 A
P
C
Collector Power Dissipation 0.2 W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
μ
A, I
E
=0
-50 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -0.1mA, I
B
=0 -45 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-50 V, I
E
=0 -0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0 -0.1
μ
A
DC current gain
h
FE
V
CE
=-5V, I
C
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-100mA, I
B
= -10mA -0.3 V
Base-emitter saturation voltage
V
BE
(sat) I
C
=-100mA, I
B
=-10mA -1 V
Transition frequency
f
T
V
CE
=-5V, I
C
= -10mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE
Rank
Range
SO
T
-23
1. BASE
2. EMITTER
3. COLLECTOR
S901 5
１
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
２
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
S901 5