= 1mA 300 1000
300-400 450-1000
TRANSISTOR (NPN)
FEATURES
z Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (T
A
=25℃
unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 50 V
V
CEO
Collector-Emitter Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 0.1 A
P
C
Collector Power Dissipation 0.2 W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherw ise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
= 100
μ
A, I
E
=0 50 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= 0.1mA, I
B
=0 45 V
Emitter-base breakdow n voltage V
(BR)EBO
I
E
=100
μ
A, I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=50 V , I
E
=0 0.1
μ
A
Collector cut-off current I
CE
V
CE
=35V , V =-3V nA
Emitter cut-off current I
EBO
V
EB
= 3V , I
C
=0 0.1
μ
A
DC current gain h
FE
V
CE
=5V, I
C
Collector-emitter saturation voltage V
CE
(sat) I
C
=100 mA, I
B
= 5mA 0.3 V
Base-emitter saturation voltage V
BE
(sat) I
C
=100 mA, I
B
= 5mA 1 V
Transition frequency
f
T
V
CE
=5V, I
C
= 10mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE
Rank
L H
Range
SO
T
-23
1. BASE
2. EMITTER
3. COLLECTOR
S901 4
１
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
X
X
50
２
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
S901 4