SCHOKKTY DIODE
FEATURES
z Low Turn-on voltage
z
Fast switching
z
Also available in lead free version
BAS70W Marking: K73 BAS70W-04 Marking: K74 BAS70W-05 Marking: K75 BAS70W-06 Marking: K76
MAXIMUM RATINGS @T
A
=25
℃
Symbol Parameter
Value Units
V
R
DC Voltage
70 V
I
F
Forward Continuous Current
70 mA
P
D
Power dissipation
200 mW
T
J
Junction Temperature
125
℃
T
stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless other wise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage
V
(BR) R
I
R
= 10µA 70 V
Reverse voltage leakage current
I
R
V
R
=50V 100 nA
Forward voltage
V
F
I
F
=1mA
I
F
=15mA
410
1000
mV
Diode capacitance
C
D
V
R
=0V,f=1MHz 2 pF
Reveres recovery time
t
rr
I
F
=I
R
=10mA,I
rr
=0.1xI
R
,
R
L
=100Ω
5 nS
SOT-323
BAS70W/-04/-05/-06
１
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
Typical Characteristics
BAS70W/-04/-05/-06
２
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu