TRANSISTOR(PNP)
FEATURES
z Complementary to S9013
z
Excellent h
FE
linearity
MARKING: 2T1
MAXIMUM RATINGS (T
A
=25 unless otherwise noted℃ )
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-40 V
V
CEO
Collector-Emitter Voltage
-25 V
V
EBO
Emitter-Base Voltage
-5 V
I
C
Collector Current -Continuous -500 mA
P
C
Collector Power Dissipation 300 mW
T
j
Junction Temperature 150
℃
T
stg
S torage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
μ
A, I
E
=0
-40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, I
B
=0 -25 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-40V, I
E
=0 -0.1
μA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0 -0.1
μ
A
DC current gain
h
FE
V
CE
=-1V, I
C
= -50mA 120 400
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-500mA, I
B
= -50mA -0.6 V
Base-emitter saturation voltage
V
BE
(sat) I
C
=-500mA, I
B
= -50mA -1.2 V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA
f=
30MHz
150 MHz
Collector output capacitance
C
ob
V
CB
=
-10
V,I
E
=0,f=
1
MHz
5 pF
CLASSIFICATION OF h
FE
Rank
L H J
Range
120-200 200-350 300-400
SO
T
-23
1. BASE
2. EMITTER
3. COLLECTOR
S901 2
１
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu
S9012
２
Ｄａｔｅ：２０１１／０５
www.htsemi.com
semiconductor
JinYu