MMDT3904-C
0.2A, 60V
NPN General Purpose Transistor
Elektronische Bauelemente
26-May-2021 Rev. E Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation P
CM
: 200mW (T
A
=25°C)
Collector Current I
CM
: 200mA
Collector–Base Voltage V
(BR)CBO
: 60V
MARKING
PACKAGING DIMENSION
Package MPQ Leader Size
SOT-363 3K 7 inch
ORDER INFORMATION
Part Number Type
MMDT3904-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5 V
Collector Current-Continuous I
C
0.2 A
Power Dissipation P
CM
200 mW
Junction, Storage Temperature Range T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
60 - -
V
I
C
=10μA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 - - I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 - - I
E
=10μA, I
C
=0
Collector Cut-off Current I
CBO
- - 0.05
μA
V
CB
=60V, I
E
=0
Collector Cut-off Current I
CEO
- - 0.05 V
CE
=40V, I
B
=0
Emitter Cut-off Current I
EBO
- - 0.05 V
EB
=5V, I
C
=0
DC Current Gain h
FE
100 - 400
V
CE
=1V, I
C
=10mA
60 - - V
CE
=1V, I
C
=50mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=50mA, I
B
=5mA
Base-Emitter Saturation Voltage V
BE(sat)
- - 0.95 V I
C
=50mA, I
B
=5mA
Transition Frequency f
T
300 - - MHz V
CE
=20V, I
C
=10mA, f=100MHz
Output Capacitance C
ob
- - 4 Pf V
CB
=60V, I
E
=0, f=1MHz
Delay time T
d
- - 35
nS
V
CC
=40V, V
BE
=60V,
I
C
=10mA, I
B1
=1mA
Rise time T
r
- - 35
Storage time T
s
- - 200
nS
V
CC
=40V, I
C
=10mA,
I
B1
=I
B2
=1mA
Fall time T
f
- - 50
SOT-363
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K 8°
E 1.10 1.50 L 0.650 TYP.
F 0.10 0.35
B
L
F
HC
J
D G
K
A
E
K6N
MA
MMDT3904-C
0.2A, 60V
NPN General Purpose Transistor
Elektronische Bauelemente
26-May-2021 Rev. E Page 2 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVES
*Dimensions in millimeters
Fig. 6, Mounting Pad Layout