UNISONIC TECHNOLOGIES CO., LTD
2N7002K
Power MOSFET
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Copyright © 2022 Unisonic Technologies Co., Ltd QW-R502-541.H
300m
A
, 60V N-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
The UTC 2N7002K uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1.Gate
2.Sourc
e
3.Drai
n
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 G S D Tape Reel
Note: Pin Assignment: G: Gate S: Source D: Drain
MARKING
2N7002K Power MOSFET
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www.unisonic.com.tw QW-R502-541.H
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Drain Current
Continuous
I
D
300
mA
Pulse(Note 2) 800
Power Dissipation
P
D
350 mW
Derating above T
A
=25°C 2.8 mW/°C
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=10µA 60 V
Drain-Source Leakage Current I
DSS
V
DS
=60V, V
GS
=0V 1.0 µA
Gate-Source Leakage Current I
GSS
V
DS
=0V, V
GS
=±20V ±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS
(
TH
)
V
DS
=V
GS
, I
D
=250µA 1.0 2.5 V
Static Drain-Source On-Resistance (Note) R
DS(ON)
V
GS
=10V, I
D
=300mA 4.0
Ω
V
GS
=4.5V, I
D
=50mA 6.0
Ω
DYNAMIC PARAMETERS
Input Capacitance (Note 1) C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
22 pF
Output Capacitance C
OSS
9 pF
Reverse Transfer Capacitance C
RSS
4 pF
SWITCHING PARAMETERS
Turn-ON Delay Time t
D
(
ON
)
I
D
=0.2 A, V
DD
=30V, V
GS
=10V,
R
L
=150Ω, R
G
=10Ω
1.3 ns
Turn-OFF Delay Time t
D
(
OFF
)
4.2 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
300 mA
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
0.8 A
Drain-Source Diode Forward Voltage V
SD
V
GS
=0V, I
S
=300mA (Note) 0.88 1.5 V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width
≦300μs, Duty cycle≦1%