1N4001W~1N4007W
Rev.E Sep.-2020
DATA SHEET
http://www.fsbrec.com 1 / 7
表面贴装整流二极管,反向电压:50V~1000V,正向电流:1.0A,薄型 SOD-123FL 封装。
Surface Mount General Purpose Silicon RectifiersReverse Voltage50 to1000VForward Current
1.0ASOD-123FL thin package.
玻璃钝化芯片,适用于自动放置,铅符合欧 RoHS 指令 2011/65/EU,适用于表面贴装。无卤产品
Glass Passivated Chip JunctionIdeal for automated placementLead free in comply with EU RoHS
2011/65/EU directivesFor surface mounted applications.Halogen free product.
一般用途.
General purpose.
印章代码 / Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1N4001W~1N4007W
Rev.E Sep.-2020
DATA SHEET
http://www.fsbrec.com 2 / 7
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
1N4001W
1N4002W
1N4003W
1N4004W
1N4005W
1N4006W
1N4007W
Maximum Recurrent
Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking
Voltage
V
DC
50 100 200 400 600 800 1000 V
Maximum Average
Forward Rectified
Current at T
a
= 65
I
F
AV
1.0
A
Peak Forward Surge
Current 8.3 ms Single
Half Sine Wave
Superimposed on Rated
Load (JEDEC Method)
I
FSM
30
A
Typical Junction
Capacitance
1
C
j
8 pF
Typical Thermal
Resistance
2)
R
θJA
90
/W
Operating and Storage
Temperature Range
T
j
,T
stg
-55~+150
Note:
1)Measured with IF=0.5A,IR=1A,Irr=0.25A.
2)P.C.B. mounted with0.2X0.2"(5X5mm) copper pad areas.
参数
Parameter
符号
Symbol
测试条件
Test
Conditions
数值
Rating
单位
Unit
1N4001W
1N4002W
1N4003W
1N4004W
1N4005W
1N4006W
1N4007W
Maximum
Instantaneous
Forward Voltage
V
F
I
F
=1.0A
1.1 V
Maximum DC
Reverse Current
at Maximum DC
Blocking Voltage
I
R
T
a
=25
5.0 μA
T
a
=125
50 μA
极限参数 / Absolute Maximum Ratings(Ta=25)
电性能参数 / Electrical Characteristics(Ta=25)