FEATURES
z
Low forward voltage : V
F
(3) = 0.9V (typ.)
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z Small total capacitance : C
T
= 0.9pF (typ.)
MARKING: C3
Maximum Ratings ,Single Diode @T
A
=25℃
Parameter Symbol Limits Unit
Non-Repetitive Peak reverse voltage
V
RM
85
V
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
Forward Continuous Current
I
FM
300
mA
Average Rectified Output Current
I
O
100
mA
Peak forward surge current @=10ms
I
FSM
2
A
Power Dissipation
P
D
150
mW
Junction temperature
T
J
150
℃
Storage temperature
T
STG
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100uA 80 V
Reverse voltage leakage current
I
R
V
R
=80V 0.5 uA
Forward voltage
V
F
I
F
=100mA 1.2
V
Diode capacitance
C
D
V
R
=0V , f=1MHz 3 pF
Reverse recovery time
t
r r
I
F
=10mA
4 nS
SOT-23
1SS226
１
www.htsemi.com
semiconductor
JinYu
Ｄａｔｅ：２０１１／０５
1SS226
２
www.htsemi.com
semiconductor
JinYu
Ｄａｔｅ：２０１１／０５