WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2017V01
Silicon N-Channel Power MOSFET
General Description:
CS20N65F A9R the silicon N-channel Enhanced
VDMOSFET, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance
(Rdso
n≤0.50
Ω)
Low Gate Charge (Typical Data:58nC)
Low Reverse transfer capacitances(Typical:20pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Continuous Drain Current T
C
= 100 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering