NJG1107KB2
- 1 -
1.5/1.9GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
IGENERAL DESCRIPTION IPACKAGE OUTLINE
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier
includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and ultra thin package of
FLP6 is adopted.
IAPPLICATIONS
Cellular phone and Japanese PHS handsets
GNSS application, like GPS, Galileo, GLONASS and COMPASS
Note: For GNSS application please refer to Application Note
IFEATURES
GLow voltage operation +2.7V typ.
GLow current consumption 3.0mA typ.
GHigh small signal gain 17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
GLow noise figure 1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
GHigh Input IP3 -4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
GUltra small & ultra thin package FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
G This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
IPIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1107KB2
PIN Connection
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
AMP
1
2
3
6
5
4
Orientation Mark
KB2 Type
(Top View)
NJG1107KB2
- 2 -
IABSOLUTE MAXIMUM RATINGS
(T
a
=+25°C, Z
s
=Z
l
=50Ω)
PARAMETER SYMBOL
CONDITIONS RATINGS UNIT
Drain Voltage V
DD
6.0 V
Input Power Pin V
DD
=2.7V +15 dBm
Power Dissipation P
D
450 mW
Operating Temp. T
opr
-40~+85 °C
Storage Temp. T
stg
-55~+125 °C
IELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(V
DD
=2.7V, f=1.49GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT1)
PARAMETER SYMBOL
CONDITIONS MIN TYP MAX UNIT
Operating Frequency
freq1 1.47 1.49 1.51 GHz
Drain Voltage V
DD
2.5 2.7 5.5 V
Operating Current I
DD
RF OFF - 3.0 3.8 mA
Small Signal Gain Gain 15.0 17.0 19.0 dB
Gain Flatness G
flat
f=1.47~1.51GHz - 0.5 1.0 dB
Noise Figure NF - 1.2 1.4 dB
Pout at 1dB Gain
Compression point
P
-1dB
-6.0 -2.0 - dBm
Input 3rd Order
Intercept Point
IIP3
f=1.49+1.4901GHz
RFin=-35dBm
-6.0 -4.0 - dBm
RF Input Port
VSWR
VSWR
i
- 1.6 2.2
RF Output Port
VSWR
VSWR
o
1.6 2.2
IELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(V
DD
=2.7V, f=1.96GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT1)
PARAMETER SYMBOL
CONDITIONS MIN TYP MAX UNIT
Operating Frequency
freq2 1.89 1.96 1.99 GHz
Drain Voltage V
DD
2.5 2.7 5.5 V
Operating Current I
DD
RF OFF - 3.0 3.8 mA
Small Signal Gain Gain 13.0 15.0 17.0 dB
Gain Flatness G
flat
f=1.89~1.99GHz - 0.5 1.0 dB
Noise Figure NF - 1.2 1.4 dB
Pout at 1dB Gain
Compression point
P
-1dB
-3.0 +1.0 - dBm
Input 3rd order
Intercept Point
IIP3
f=1.96+1.9601GHz
RFin=-30dBm
-6.0 -2.0 - dBm
RF Input Port
VSWR
VSWR
i
- 1.6 2.2
RF Output Port
VSWR
VSWR
o
- 1.6 2.2