© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1 Publication Order Number:
MBD701/D
MBD701,
MMBD701L,
SMMBD701L
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.0 pF @ V
R
= 20 V
• High Reverse Voltage − to 70 V
• Low Reverse Leakage − 200 nA (Max)
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC Qualified and PPAP
Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
MBD701
MMBD701L, SMMBD701L
Derate above 25°C
MBD701
MMBD701L, SMMBD701L
P
F
280
200
2.8
2.0
mW
mW/°C
Operating Junction Temperature
Range
T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−23 (TO−236)
CASE 318
STYLE 8
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5H M G
G
A = Assembly Location
Y = Year
W = W ork Week
5H = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO−92 2−Lead
CASE 182
STYLE 1
MBD
701
AYW G
G
SOT−23TO−92
SOT−23TO−92
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
www.
onsemi.com
MBD701, MMBD701L, SMMBD701L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mAdc)
V
(BR)R
70 − −
V
Total Capacitance
(V
R
= 20 V, f = 1.0 MHz) F ig ure 1
C
T
− 0.5 1.0
pF
Reverse Leakage
(V
R
= 35 V) Figure 3
I
R
− 9.0 200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
V
F
− 0.42 0.5
Vdc
Forward Voltage
(I
F
= 10 mAdc) Figure 4
V
F
− 0.7 1.0
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Package Shipping
†
MBD701G TO−92
(Pb−Free)
1,000 Units / Bulk
MMBD701LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBD701LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBD701LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.