VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
1
Document Number: 94391
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor High Voltage, Phase Control SCR, 70 A
FEATURES
• High surge capability
• High voltage input rectification
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• AC switches
• High voltage input rectification (soft start)
• High current crow-bar
• Other phase-control circuits
• Designed to be used with Vishay input diodes, switches,
and output rectifiers which are available in identical
package outlines
DESCRIPTION
The VS-70TPS..PbF high voltage series of silicon controlled
rectifiers are specifically designed for high and medium
power switching, and phase control applications.
PRODUCT SUMMARY
Package Super TO-247
Diode variation Single SCR
I
T(AV)
70 A
V
DRM
/V
RRM
1200 V, 1600 V
V
TM
1.25 V
I
GT
100 mA
T
J
-40 °C to 125 °C
(G) 3
2
(A)
1 (K)
Super TO-247
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 70
A
I
RMS
Lead current limitation 75
V
RRM
/V
DRM
Range 1200/1600 V
I
TSM
1100 A
V
T
100 A, T
J
= 25 °C 1.4 V
dV/dt 500 V/μs
dI/dt 150 A/μs
T
J
-40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
VS-70TPS12PbF 1200 1300
15
VS-70TPS16PbF 1600 1700
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
2
Document Number: 94391
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 82 °C, 180° conduction half sine wave 70
A
Maximum continuous RMS on-state
current as AC switch
I
T(RMS)
Lead current limitation 75
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial T
J
= T
J
maximum
930
10 ms sine pulse, no voltage reapplied 1100
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 4325
A
2
s
10 ms sine pulse, no voltage reapplied 6115
Maximum I
2
√t for fusing I
2
√t t = 0.1 ms to 10 ms, no voltage reapplied 61 150 A
2
√s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
0.916
V
High level value of threshold voltage V
T(TO)2
1.21
Low level value of on-state slope resistance r
t1
4.138
mΩ
High level value of on-state slope resistance r
t2
3.43
Maximum peak on-state voltage V
TM
100 A, T
J
= 25 °C 1.4 V
Maximum rate of rise of turned-on current dI/dt T
J
= 25 °C 150 A/μs
Maximum holding current I
H
Anode supply = 6 V, resistive load, initial I
T
= 1 A, T
J
= 25 °C 200
mA
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 400
Maximum reverse and direct leakage current I
RRM
/I
DRM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
(T
J
= T
J
max., linear to 80 %
V
DRM
= R
g
-k = Open)
1.0
T
J
= 125 °C 15
Maximum rate of rise of off-state voltage dV/dt T
J
= 125 °C 500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T = 30 μs
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum required DC gate voltage to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V resistive load
1.8
T
J
= 25 °C 1.5
T
J
= 125 °C 1.1
Maximum required DC gate current to trigger I
GT
T
J
= - 40 °C
Anode supply = 6 V resistive load
150
mAT
J
= 25 °C 100
T
J
= 125 °C 80
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25 V
Maximum DC gate current not to trigger I
GD
6mA