This is information on a product in full production.
December 2013 DocID025560 Rev 1 1/11
HSP061-4M10Y
Automotiv e 4-line ESD protection for high speed lines
Datasheet - production data
Features
Flow-through rout ing to keep signal integrity
Ultralarge bandwidth: 8.7 GHz
Ultralow capacitance: 0.3 pF
Low leakage current: 70 nA at 25 °C
Ext ended operating jun ction tem peratur
e
ran
ge: -40 °C t o 150 °C
Thin pack age: 0.5 mm m ax.
RoHS compliant
AEC-Q101 qualified
Benefits
High ESD robustn ess of the equipment
Sui table for high density boards
Complies wit h following sta ndards
MIL-STD 883G Method 3015-7 Class 3B:
–8 kV
IEC 61000-4-2 level 4:
8 kV (contact discharge)
15 kV (air discharge)
ISO 10605: C = 150 pF, R = 330
:
8 kV (contact discharge)
15 kV (air discharge)
ISO 10605: C = 330 pF, R = 330
:
8 kV (contact discharge)
15 kV (air discharge)
ISO 7637-3:
pulse 3a: -150 V
pul se 3b: +100 V
Applications
The HSP06 1-4M1 0Y is designe d to protect
against electrostatic discharge on sub micron
technology circuits driving:
Automotive communication buses
HDMI 1.3 and 1.4
LVDS
APIX
Digital Video Interfac
e
U
SB 3.0
Description
The HSP06 1-4M1 0Y is a 4-channel ESD array
with a rail t o rai l architecture designed specifically
for the protection of high speed diff erential lines.
The ultralow variation of the capacitance ensures
very low influence on signal-skew. The large
bandwidth makes the device compatible with
3.4 Gbps.
The device is packaged in
µQFN-10L 2.5 x 1 mm
with a 500 µm pit ch, which minimizes the PCB
area.
µQFN- 10L package
www.st.com
Characteristics HSP061-4M10Y
2/11 DocID025560 Rev 1
1 Characteristics
Figure 1. Functional schematic (top view)
Table 1. Absolute maximum ratings T
amb
= 25 °C
Symbol Parameter Value Unit
V
PP
Peak pulse vol tage
ISO 10605: C = 150 pF, R = 330
contact discharge
air discharge
ISO 10605: C = 330 pF, R = 330
contact discharge
air discharge
8
15
8
15
kV
T
j
Operati ng junction temperature range -40 to +150 °C
T
stg
S torage tempe rature range -65 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics T
amb
= 25 °C
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
Breakdown voltage I
R
= 1 mA 6 V
I
RM
Leakage current V
RM
= 3 V 70 nA
V
CL
Clamping voltage IPP = 1 A, 8/20 µs 15 V
C
I/O - I/O
Capacitance
(I/O to I/O )
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV 0.3 0.4 pF
C
I/O - GND
Capacitance
(I/O to GND )
V
I/O
= 0 V F = 1 MHz, V
OSC
= 30 mV 0.6 0.8 pF
f
C
Cut-off frequency -3dB 8.7 GHz
Z
Diff
Differential
impedance
t
r
= 200 ps (10 - 90%)
(1)
, Z
0 Diff
= 100
1. HDM I spec if i cat ion con di ti ons . Th is info rm at ion ca n be pr ov ided fo r oth er appl ic at i on s. Pl ea se co nta ct you r
local ST office.
85 100 115
I/O 1
I/O 2
GND
I/O 3
I/O 4
Internally
not connected
GND
Internally
not connected
1
2
4
5
6
8
9
10
3
7