© Semiconductor Components Industries, LLC, 2013
July, 2020 Rev. 16
1 Publication Order Number:
MUR420/D
Switch-Mode Power
Rectifiers
MUR405, MUR410, MUR415,
MUR420, MUR440, MUR460
These stateoftheart devices are a series designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 25 ns, 50 ns and 75 ns Recovery Times
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 600 V
Shipped in Plastic Bags, 500 per Bag
Available in Tape and Reel, 1500 per Reel, by Adding a “RLG’
Suffix to the Part Number
MUR460 available in Fan Fold Ammo Pak, 1000 per Box,
by adding a “FFG” suffix to the part number
These are PbFree Packages*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 267
STYLE 1
ULTRAFAST RECTIFIERS
4.0 AMPERES, 50600 VOLTS
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
A = Assembly Location
MUR4xx = Device Number
x = 05, 10, 15, 20, 40, 60
YY = Year
WW = Work Week
G =PbFree Package
MARKING DIAGRAM
A
MUR
4xx
YYWW G
G
(Note: Microdot may be in either location)
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MUR
Unit
405 410 415 420 440 460
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100 150 200 400 600 V
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 2)
I
F(AV)
4.0 @ T
A
= 80°C 4.0 @
T
A
= 40°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
I
FSM
125 110 A
Operating Junction Temperature & Storage Temperature T
J
, T
stg
*65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol
MUR
Unit
405 410 415 420 440 460
Maximum Thermal Resistance, JunctiontoAmbient
R
q
JA
See Note 2 °C/W
Maximum Thermal Resistance, JunctiontoCase Body
Y
q
JC
6.6 °C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol
MUR
Unit
405 410 415 420 440 460
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 A, T
J
= 150°C)
(i
F
= 3.0 A, T
J
= 25°C)
(i
F
= 4.0 A, T
J
= 25°C)
v
F
0.71
0.88
0.89
1.05
1.25
1.28
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 150°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
150
5
250
10
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
35
25
75
50
ns
Maximum Forward Recovery Time
(I
F
= 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
t
fr
25 50 ns
Controlled Avalanche Energy (Maximum) W
aval
5 mJ
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
I
RM
0.8 1.7 A
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.