TVS Diode Array Datasheet
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 09/16/21
1
SM24CANB Series
General Purpose ESD Protection
Description
Applications
The SM24CANB TVS Diode Array is designed to protect
automotive Controller Area Network (CAN) lines from damage due
to electrostatic discharge (ESD), electrical fast transient (EFT), and
other overvoltage transients.
The SM24CANB Series can absorb repetitive ESD strikes above
the maximum level specified in the IEC 61000-4-2 international
standard without performance degradation and safely dissipate
10A of 8/20µs surge current (IEC 61000-4-5 2nd Edition) with
very low clamping voltages.
Features & Benefits
■ ESD, IEC 61000-4-2, ±30kV
contact, ±30kV air
■ EFT, IEC 61000-4-4,50A
(5/50ns)
■ RoHS compliant and Lead-
free
■ Surge tolerance, IEC
61000-4-5 2nd edition, 10A
(tp=8/20μs)
■ Low clamping voltage
■ Low leakage current
■ AEC-Q101 qualified
■ PPAP capable
■ Halogen free, lead free and
RoHS compliant
■ Moisture Sensitivity Level
(MSL-1)
■ CAN Bus Protection
■ Automotive Networks
■ On-Board Diagnostics
■ Sensors, Actuators
■ EnergyBus
■ Industrial Control Networks
■ Device Net
■ Safety BUS
■ CAN open
Pinout and Functional Block Diagram
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
RoHS
Pb
Pin 1Pin 2
Pin 3
Functional Block Diagram
3
1
2
Application Example
SPLIT
CAN
BUS
SM24CANB-02HTG (500W)
CANL
CAN BUS
Transceiver
Common
Mode Choke
(optional)
CANH
C G
R T/2
R T/2
Resources Accessories Samples
Additional Information
TVS Diode Array Datasheet
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 09/16/21
2
SM24CANB Series
General Purpose ESD Protection
Caution: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
P
Pk
Peak Pulse Power (t
p
=8/20μs) 500 W
I
PP
Peak Pulse Current (t
p
=8/20μs) 10.0 A
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Ty p Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA, Pin 1 or Pin 2 to Pin 3 24.0 V
Reverse Breakdown Voltage V
BR
I
T
=1mA, Pin 1 or Pin 2 to Pin 3 26.7 V
Leakage Current I
LEAK
V
R
=24V, Pin 1 or Pin 2 to Pin 3 0.1 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 34.0 V
I
PP
=8A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 46.0 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 50 V
Dynamic Resistance
2
R
DYN
TLP, t
P
=100ns, Pin 1 or Pin 2 to Pin 3 0.6 Ω
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz;
Pin 1 or Pin 2 to Pin 3
30 pF
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
Note:
1
Parameter is guaranteed by design and/or device characterization.
2
Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns
0.0
10.0
20.0
30.0
40.0
50.0
024681012141618202224
Capacitance (pF)
Bias Voltage (V)
Capacitance vs. Reverse Bias
(Pin1 or Pin2 to Pin3)