TVS Diode Array Datasheet
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 09/13/21
1
SM Series
General Purpose ESD Protection
Description
Applications
The SM series TVS Diode Array is designed to protect sensitive
equipment from damage due to electrostatic discharge (ESD),
electrical fast transients (EFT), and lightning induced surges.
The SM series can absorb repetitive ESD strikes above the
maximum level specified in IEC 61000-4-2 international standard
without performance degradation and safely dissipate up to 24A of
8/20µs induced surge current (IEC-61000-4-5) with very low
clamping voltages.
Features & Benefits
■ ESD, IEC 61000-4-2, ±30kV
contact, ±30kV air
■ EFT, IEC 61000-4-4, 50A
(5/50ns)
■ Lightning, IEC 61000-4-5 2nd
edition, 24A (tP=8/20μs,
SM05)
■ Halogen free, lead free and
RoHS compliant
■ Working voltages: 5V, 12V,
15V, 24V and 36V
■ Low clamping voltage
■ Low leakage current
■ AEC-Q101 qualified
■ Moisture Sensitivity
Level(MSL -1)
■ Industrial Equipment
■ Test and Medical Equipment
■ Point-of-Sale Terminals
■ Motor Controls
■ Legacy Ports (RS-232, RS-
485)
■ Security and Alarm Systems
Pinout and Functional Block Diagram
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
RoHS
Pb
1
2
3
RS-232 Application Example
IC
RD
TD
RTS
CTS
DSR
DTR
RS-232 Port
Transceiver
SM15 (x6)
(bidirectional implementation)
Case GND
TVS Diode Array Datasheet
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 09/13/21
2
SM Series
General Purpose ESD Protection
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
P
Pk
Peak Pulse Power (t
p
=8/20μs) 400 W
T
OP
Operating Temperature -40 to 150 °C
T
STOR
Storage Temperature -55 to 150 °C
SM05 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Ty p Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 5.0 V
Reverse Voltage Drop V
R
I
R
=1mA 6.0 V
Leakage Current I
LEAK
V
R
=5V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 13.0 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.19 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 24.0 A
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 400 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 350 pF
SM12 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Ty p Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 12.0 V
Reverse Voltage Drop V
R
I
R
=1mA 13.3 V
Leakage Current I
LEAK
V
R
=12V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.25 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 1 7. 0 A
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 150 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 120 pF