www.excelitas.com Page 1 of 9 PGA series Rev.2014-04
DATASHEET
Photon Detection
PGA Series of Single-epi 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Series
Excelitas Technologies’ PGA pulsed laser series consists of hermetically
packaged devices having a single-active lasing layer, which are epitaxially
grown on a single GaAs substrate chip. The laser chips feature stripe widths
of 75 to 600 µm and can be stacked to further increase the output power.
The PGA series possesses a 25° beam divergence in the direction
perpendicular to chip surface and a 10° beam spread within the junction
plane. The power output shows an excellent stability over the full MIL
specification temperature range. Structures are fabricated using metal
organic chemical vapour deposition (MOCVD).
Recognizing that different applications require different packages, six
standard package options are available, including the traditional stud
designs as well as 5.6 and 9 mm CD packages and ceramic substrates.
Since pulse widths in applications have decreased and optical coupling has
become even more important, the newer packages – boasting reduced
inductance and thinner, flatter windows – have gained popularity.
Key Features
Peak power to 160 Watts
Range of single element and
stacked devices
Overdrive capability up to 4 X
power
25° beam divergence for single
elements
83% power retention at 85°C
RoHS compliant
Applications
Laser range finding
Laser safety curtains (laser
scanning)
Laser speed measurements
(LIDAR)
Automotive adaptive cruise
control (ACC)
Material excitation in medical and
other analytical applications
Weapons simulation
Proximity Sensing
Available in several package types, the PGA series laser chips feature stripe
widths of 75 to 600 µm and can be stacked to further increase output power.
www.excelitas.com Page 2 of 9 PGA series Rev.2014-04
PGA Series of 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Series
Table 1: Maximum Ratings
Parameter
Symbol
Min
Max
Units
Peak reverse voltage
V
RM
2
V
Pulse duration
Single Element
Multi Element
t
W
1
200
µs
ns
Duty factor
du
0.1
%
Storage temperature
T
S
-55
105
°C
Operating temperature
T
OP
-55
85
°C
Soldering for 5 seconds (leads only)
+260
°C
Table 2: Generic Electro Optical Specifications at 23°C
Parameter
Symbol
Min
Typ
Max
Units
Center wavelength of spectral envelope
λ
C
895
905
915
nm
Spectral bandwidth at 50% intensity points
Δλ
5
nm
Wavelength temperature coefficient
Δλ/ΔT
0.25
nm/°C
Beam spread (50% peak intensity) parallel to junction plane
Θ
||
10
degrees
Beam spread (50% peak intensity) perpendicular to junction plane
Single Element
Stacks
Θ
|
25
30
degrees
degrees
Table 3: Single Element Characteristics at T
OP
= 23ºC, t
W
= 150ns, prr = 1kHz
Parameter
PGAS1S03H
PGAS1S06H
PGAS1S09H
PGAS1S12H
PGAS1S16H
PGAS1S24H
Units
Minimum Optical Power at i
FM
P
Omin
5.5
13
19
26
35
54
W
Typical Optical Power at i
FM
P
Otyp
6.2
15
22
30
40
60
W
Number of Elements
-
1
1
1
1
1
1
Emitting area
75 X 1
150 X 1
225 X 1
300 X 1
400 X 1
600 X 1
µm
Maximum Peak forward current
i
FM
7
15
22
30
40
60
A
Typical lasing threshold current
i
TH
0.5
1.0
1.5
2.5
2.5
3.0
A
Series Resistance
R
D
0.160
0.130
0.115
0.110
0.100
0.095
Ohms
Preferred Package
S, U
S, U
S, U
S, U
S, U
S
Package Options
C, F, R, Y
C, F, R, Y
C, F, R, Y
C, F, R, Y
C, F, R, Y
C, F, R, Y