August 2010 Doc ID 15583 Rev 3 1/11
11
ESDALC6V1-1BU2
Single-line low capacitance Transil™
for bidirectional ESD protection
Features
■ Breakdown voltage V
BR
= 6.1 V min.
■ Bidirectional device
■ Multiple ESD strike sustainability
■ Very low diode capacitance: 5 pF typ. at 0 V
■ Low leakage current
■ 0201 SMD package size compatible
■ Ultra small PCB area: 0.18 mm
2
■
RoHS compliant
Benefits
■ High ESD protection level
■ High integration
■ Suitable for high density boards
■ MSL1
Complies with the following standards:
■ IEC 61000-4-2 level 4
–
15 kV (air discharge)
– 8 kV (contact discharge)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
■ Portable multimedia players and accessories
■ Notebooks
■ Digital cameras and camcorders
■ Communication systems
■ Cellular phone handsets and accessories
Figure 1. Functional diagram (top view)
Description
The ESDALC6V1-1BU2 is a bidirectional single
line TVS diode designed to protect data lines or
other I/O ports against ESD transients.
The device is ideal for applications where both
reduced line capacitance and board space saving
are required.
TM: Transil is a trademark of STMicroelectronics
Pin 1 available in different forms
ST0201 package
www.st.com
Characteristics ESDALC6V1-1BU2
2/11 Doc ID 15583 Rev 3
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage:
IEC 61000-4-2 contact discharge
EC 61000-4-2 air discharge
±8
±15
kV
I
PP
Peak pulse current (8/20 µs) 1.5 A
T
stg
Storage temperature range - 55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
T
op
Operating junction temperature range -40 to +125 °C
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
I = Forward current
I = Peak pulse current
I = Breakdown current
V = Forward voltage drop
R
BR
RM RM
RM
PP
R
F
V = Clamping voltage
CL
F
d
= Dynamic impedance
T = Voltage temperaturea
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 6.1 - - V
I
RM
V
RM
= 3 V --100nA
R
d
Square pulse, I
PP
= 1 A t
p
= 2.5 µs - 2.5 - Ω
αT ΔV
BR
= αT(T
amb
- 25 °C) x V
BR
(25 °C) - - 6 10
-4
/°C
C
line
V
R
= 0 V, F
osc
= 1 MHz, V
osc
= 30 mV - 5 - pF