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CBM8557-CBM8558-CBM8559

OPERATION INSTRUCTION

Features

 Low Offset Voltage: 20uV

 Input Offset Drift: 0.03μV/°C

 High Gain Bandwidth Product: 4.3MHz

 Rail-to-Rail Input and Output

 High Gain, CMRR, PSRR:120dB

 High Slew Rate: 2.5V/μs

 Low Noise: 0.93uVp-p (0.01~10Hz)

 Low Power Consumption: 650μA /op amp

 Overload Recovery Time:1us

 Low Supply Voltage: +2.7 V to +5.5 V

 No External Capacitors Required

 Extended Temperature: -40°C to +125°C

Application

 Temperature Sensors

 Medical/Industrial Instrumentation

 Pressure Sensors

 Battery-Powered Instrumentation

 Active Filtering

 Weight Scale Sensor

 Strain Gage Amplifiers

 Power Converter/Inverter

Description

The CBM8557, CBM8558, CBM8559 series of CMOS operational amplifiers use auto-zero

techniques to simultaneously provide very low offset voltage (50μV max) and near-zero drift

over time and temperature. This family of amplifiers has ultralow noise, offset and power.

This miniature, high-precision operational amplifiers offset high input impedance and

rail-to-rail input and rail-to-rail output swing. With high gain-bandwidth product of 4.3MHz and

slew rate of 2.5V/μs. Single or dual supplies as low as +2.7V (±1.35V) and up to +5.5V (±2.75V)

may be used.

The CBM8557/CBM8558/CBM8559 are specified for the extended industrial and automotive

temperature range (-40°C to 125°C). The CBM8557 single amplifier is available in 5-lead SOT23,

8-lead MSOP8 and 8-lead SOIC packages, The CBM8558 dual amplifier is available in 8-lead SOIC

and 8-lead MSOP narrow surface mount packages, The CBM8559 quad amplifier is available in

14-lead SOIC and 14-lead narrow TSSOP packages.

www.corebai.com

CBM8557-CBM8558-CBM8559

OPERATION INSTRUCTION

PIN CONFIGURATIONS

ABSOLUTE MAXIMUM RATINGS

(1)

 Supply Voltage, V+ to V-...............................................7.0V

 Input Terminals, Voltage

(2)

…………... – 0.5 to (V+) + 0.5V

Current

(2)

…………………....…..... ±10mA

 Storage Temperature ……….…………… −65°C to +150°C

 Operating Temperature ……….………… −40°C to +125°C

 Junction Temperature................................................150°C

 Package Thermal Resistance @ T

= +25°C

 SOT23-5, SOT23-6………………….………………200°C/W

 MSOP-8, SOIC-8 …………………….…………... 150°C/W

 SOIC-14, TSSOP-14………….……….……………100°C/W

 Lead Temperature (Soldering, 10s) …….......260°C

ESD Susceptibility

 HBM …......................................................................5000V

 MM ……………………….........………………...……….400V