Transphorm Inc. 115 Castilian Drive, Goleta, CA 93117, USA Ph: 805-456-1300
Page 1 of 3
Product Qualification Report
1. Purpose
a. The purpose of this specification is to document the Qualification Report for
TP65H300G4LSG
2. Scope
a. The products listed in section 1 are fully qualified and released to production.
b. Qualification test results on these products may reference existing qualification results of
similar products per the use of generic data as defined in section 2.2 of AEC-Q101 Rev
D1
c. Each of the referenced part numbers share the same major assembly process and
material elements as defined in Stress Test qualification for Automotive Grade
Semiconductors, AEC-Q101 and are considered to be part of the same qualification
family.
3. Qualification Process
a. All Fab Lots were processed separately with a discrete amount of time between lots. All
lots were assembled using the same Assembly House, on the same assembly line. All
lots undergo Final Test using the documented test flow and are screened against
documented test limits as appropriate to their part number. All processes and test
conditions are documented and maintained under revision control as part of the
Transphorm Quality Management System.
b. Documented process and test conditions that are used for qualification of products are
designated “Process of Record”. Changes to the Process of Record are managed
through the Process/Product Change Notification Procedure, which is part of the
Transphorm Quality Management System.
4. ESD Results: 3 parts pass for each test
a. Standard Used: ANSI/ESDA/JEDEC JS-002-2018
b. HBM (Human Body Model): ±550V / Rated 1B
c. CDM (Charge Device Model): ≥ 2000V / Rated C7
5. Mechanical Tests: All tests passed
Test Name
Reference Standard
Solderability
JESD22 A113
Bond Pull Strength
MIL STD-833 M2011
Bond Shear
JESD22-B116
6. Reliability Testing
a. Failed devices are analyzed for root cause and correction. Only a representative sample
needs to be analyzed, though some level of analysis will be applied to every failed part.
Acceptable root cause and corrective action and successful demonstration of corrective
and preventative actions will constitute successful qualification of a device. The part
and/or qualification family can be qualified as long as containment of any problems are
demonstrated until corrective and/or preventative actions are in place.
7. Electrical Test Parameters
a. Components submitted for qualification testing must meet all datasheet parameters
before and after stress testing
Name: Qualfication Report TP65H300G4LSG Version: 1.00
Document Number: D-01534 Published: 28-Apr-2020 13:35
Transphorm
Transphorm Inc. 115 Castilian Drive, Goleta, CA 93117, USA Ph: 805-456-1300
Page 2 of 3
Product Qualification Report
8. Electrical Reliability Qualification Test Results
TEST
SYMBOL
CONDITIONS
SAMPLE
RESULT
Moisture/Reflow
Sensitivity
MSL-3
MSL-3
Pb-free
T
C
= 260ºC
9 lots
25 units per lot
225 total parts
0 Fails
PASS
High Temperature
Reverse Bias
HTRB
T
J
=150ºC
V
DS
= 520V
1000 HRS
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
Highly Accelerated
Temp and Humidity
Test
HAST
130ºC,85% RH
33.3 PSI
Bias = 100V
96 HRS
MSL pre-con
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
Temperature Cycle
TC
-40ºC / 125ºC
2 Cycles / HR
500 Cycles
MSL pre-con
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
Power Cycle
PC
25ºC / 125ºC
ΔT = 100ºC
7500 Cycles
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
High Temperature
Gate bias
HTGB
150ºC
1000 HRS
V
GSS
=18V
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
Unbiased Highly
Accelerated Temp
and Humidity Test
UHAST
130C, 85%RH,
33.3 PSI,96 Hrs
MSL pre-con
3 lots
77 parts per lot
231 total parts
0 Fails
PASS
Parts for Power Cycle and Temperature Cycle will be mounted to printed circuit board.
Parts for TC, HAST and UHAST are preconditioned prior to stress test per JESD22-A113
Parameter
Symbol
Conditions
LSL
USL
Unit
Drain to source leakage
current
I
DSS
V
DS
= 650V
V
GS
= 0V
T
J
=25ºC
12
μA
Gate to Source Forward
Leakage Current
I
GSS
V
GS
=20V
100
nA
Drain source on resistance
R
DS
V
GS
= 8V
I
D
=5A
T
J
= 25ºC
288
mΩ
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
ID=0.5mA
1.6
2.6
V
Name: Qualfication Report TP65H300G4LSG Version: 1.00
Document Number: D-01534 Published: 28-Apr-2020 13:35
Transphorm