DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MO U NT TRANSISTOR
Features
DS30436 Rev. 8 - 2 1 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DMMT5401)
• Ideal for Low Power Amplification and Switching
• Intrinsically Matched NPN Pair (Note 1)
• 2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
• Lead Free/RoHS Compliant (Note 4)
• "Green" Device (Note 5 and 6)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: K4R & K4T, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
0.95
F
⎯ ⎯
0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α
0° 8°
⎯
All Dimens ons in mm i
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic
A
Symbol Value Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current - Continuous (Note 2)
I
C
200 mA
Power Dissipation (Note 2, 3)
P
d
300 mW
Thermal Resistance, Junction to Ambient (Note 2)
R
θ
JA
417 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
M
J
L
D
F
B
C
H
K
C
2
E
2
E
1
B
2
B
1
C
1
C
2
E
1
C
1
B
2
E
2
B
1
DMMT5551S
(K4T Marking Code)
DMMT5551
(K4R Marking Code)
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic
DS30436 Rev. 8 - 2 2 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
V
(BR)CBO
180
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
160
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
μA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100°C
Emitter Cutoff Current
I
EBO
⎯
50 nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
h
FE
80
80
30
⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
6.0 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
FE
50 250
⎯
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100 300 MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure NF
⎯
8.0 dB
V
CE
= 5.0V, I
C
= 200μA,
R
S
= 1.0kΩ,
f = 1.0kHz
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
FE
, (matched at I
C
= 10mA and V
CE
= 5V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base Emitter Saturation Voltage,
V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
110100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLT AGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Col lector Cur re nt
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs.
Am bient Tem perature
A
150
200
250
300
350
400
0