QUALIFICATION REPORT
EPC Reliability & Quality
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 1
EPC eGaN® FET
Qualication Report
EPC2070
EFFICIENT POWER CONVERSION
Dr. Robert Strittmatter, Vice President of Reliability, Efficient Power Conversion Corporation
This report summarizes the Product Qualication results for EPC
part number EPC2070 which meets all required qualication
requirements and is released for production.
Qualication Test Overview
EPC’s eGaN FETs were subjected to a wide variety of stress tests under
conditions that are typical for silicon-based power MOSFETs. These
tests included:
– High temperature reverse bias (HTRB): Parts are subjected to a drain-
source voltage at the maximum rated temperature
– High temperature gate bias (HTGB): Parts are subjected to a gate-
source voltage at the maximum rated temperature
– High temperature storage (HTS): Parts are subjected to heat at the
maximum rated temperature
– Temperature cycling (TC): Parts are subjected to alternating high-
and low temperature extremes
– High temperature high humidity reverse bias (H3TRB): Parts are
subjected to humidity under high temperature with a drain-source
voltage applied
– Moisture sensitivity level (MSL): Parts are subjected to moisture,
temperature, and three cycles of reow
– Electrostatic discharge (ESD) characterization: Parts are tested
under Human Body Model (HBM) to assess device susceptibility to
electrostatic discharge events.
The stability of the devices is veried with DC electrical tests after stress
biasing. The electrical parameters are measured at time-zero and at
interim readout points at room temperature. Electrical parameters such
as the gate-source leakage, drain-source leakage, gate-source threshold
voltage, and on-state resistance are compared against the data sheet
specications. A failure is recorded when a part exceeds the datasheet
specications. eGaN FETs are stressed to meet the latest Joint Electron
Device Engineering Council (JEDEC) standards when possible.
Parts for all tests except for TC were mounted onto FR5 (high Tg FR4) or
polyimide adaptor cards. Adaptor cards of 1.6 mm in thickness with two
copper layers were used. The top copper layer was 1 oz. or 2 oz., and
the bottom copper layer was 1 oz. Kester NXG1 type 3 SAC305 solder no
clean ux was used in mounting the part onto an adaptor card.
Scope
The testing matrix in this qualication report covers the qualication
of EPC2070, listed in the table below. EPC2070 has the same size and
copper pillar package as EPC2051. It also shares the same process and
design as EPC2204 and EPC2218, both larger than EPC2070.
Part Number
Voltage
(V)
Max R
DS(on)
(mΩ)
Die Size
(mm x mm)
EPC2070 100 23 S (1.3 x 0.85)
QUALIFICATION REPORT
EPC Reliability & Quality
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 2
High Temperature Gate Bias
Parts were subjected to 6V gate-source bias at the maximum rated temperature for a stress period of 1000 hours. EPC2070 is qualied by matrix
with EPC2204 and EPC2218.
High Temperature Storage
Parts were subjected to heat at the maximum rated temperature. EPC2070 is qualied by matrix with EPC2051.
Temperature Cycling
Parts loaded into trays or mounted onto DUT cards were subjected to temperature cycling between -40°C and +125°C, with dwell time of 5 minutes
and less than 1 cycles/hour in accordance with the JEDEC Standard JESD22A104. EPC2070 is qualied by matrix with EPC2051.
Table 2. High Temperature Gate Bias Test
Table 3. High Temperature Storage Test
Table 4. Temperature Cycling Test
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTRB
EPC2218
100 L (3.5 x 1.95) T = 150°C, V
GS
= 6 V 0 77 x 1 1000
HTRB
EPC2204
100 M (2.5 x 1.5) T = 150°C, V
GS
= 6 V 0 77 x 1 1000
HTRB
EPC2070
100 S (1.3 x 0.85) T = 150°C, V
GS
= 6 V 0 77 x 1 1000
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTS
EPC2070
100 S (1.3 x 0.85) T = 150°C, Air 0 77 x 2 1000
HTS
EPC2051
100 S (1.3 x 0.85) T = 150°C, Air 0 77 x 4 1000
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Cys)
TC
EPC2070
100 S (1.3 x 0.85) -40 to +125°C, Air 0 77 x 1 850
TC
EPC2051
100 S (1.3 x 0.85) -40 to +125°C, Air 0 77 x 3 1000
High Temperature Reverse Bias
Parts were subjected to 80% of the rated drain-source voltage at the maximum rated temperature for a stress period of 1000 hours. EPC2070 is
qualied by matrix with EPC2204 and EPC2218.
Table 1. High Temperature Reverse Bias Test
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTRB
EPC2218
100 L (3.5 x 1.95) T=150°C, V
DS
= 80 V 0 77 x 1 1000
HTRB
EPC2204
100 M (2.5 x 1.5) T=150°C, V
DS
= 80 V 0 77 x 1 1000
HTRB
EPC2070
100 S (1.3 x 0.85) T=150°C, V
DS
= 80 V 0 77 x 1 1000
High Temperature High Humidity Reverse Bias
Parts were subjected to 80% of the rated drain-source voltage at 85% relative humidity and 85°C for a stress period of 1000 hours. The testing was
done in accordance with the JEDEC Standard JESD22A101.
Table 5. High Temperature High Humidity Reverse Bias Test
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
H3TRB
EPC2051
100 S (1.3 x 0.85) T = 85°C, RH = 85%, V
DS
= 80 V 0 77 x 2 1000