RGW60TS65CHR
650V 30A Hybrid IGBT with Built-In SiC-SBD
V
CES
650V
TO-247N
I
C (100°C)
30A
V
CE(sat) (Typ.)
1.5V
P
D
178W
Tape Width (mm)
-
Basic Ordering Unit (pcs)
Unit
lOutline
lInner Circuit
lPackaging Specifications
Type
Packaging
Tube
Reel Size (mm)
-
V
V
450
Packing Code
C11
Marking
RGW60TS65C
lAbsolute Maximum Ratings (at T
C
= 25°C unless otherwise specified)
Symbol
Value
PFC
Industrial Inverter
A
I
C
64
A
I
C
39
A
-40 to +175
°C
Power Dissipation
T
C
= 100°C
I
FP
*1
100
A
T
C
= 25°C
P
D
178
W
I
F
39
A
I
F
25
A
I
CP
*1
650
±30
V
CES
V
GES
120
*1 Pulse width limited by T
jmax.
T
C
= 25°C
Collector Current
T
C
= 25°C
T
C
= 100°C
Diode Forward Current
T
C
= 100°C
T
stg
-55 to +175
°C
P
D
89
W
T
j
lFeatures
lApplication
Automotive
On & Off Board Chargers
DC-DC Converters
1) AEC-Q101 Qualified
2) Low Collector - Emitter Saturation Voltage
3) Low Switching Loss & Soft Switching
4) Built in No Recovery Silicon Carbide SBD
5) Pb - free Lead Plating ; RoHS Compliant
(1) Gate
(2) Collector
(3) Emitter
*1
*1 Built in SiC-SBD
(1)
(2)
(3)
(1)
(2)
(3)
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© 2021 ROHM Co., Ltd. All rights reserved.
1/13
2021.12 - Rev.B
Datasheet
RGW60TS65CHR
5
mA
Gate - Emitter Leakage
Current
I
GES
V
GE
= ±30V, V
CE
= 0V
-
-
±200
nA
Collector Cut - off Current
I
CES
V
CE
= 650V, V
GE
= 0V
-
-
Gate - Emitter Threshold
Voltage
V
GE(th)
V
CE
= 5V, I
C
= 20.0mA
5.0
6.0
7.0
V
Collector - Emitter Saturation
Voltage
lThermal Resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal Resistance Diode Junction - Case
R
θ(j-c)
-
-
1.34
C/W
Min.
Typ.
Max.
Collector - Emitter Breakdown
Voltage
BV
CES
I
C
= 5mA, V
GE
= 0V
Values
Unit
C/W
V
Parameter
Symbol
Conditions
lIGBT Electrical Characteristics (at T
j
= 25°C unless otherwise specified)
650
-
-
Thermal Resistance IGBT Junction - Case
R
θ(j-c)
-
-
0.84
V
CE(sat)
I
C
= 30A, V
GE
= 15V,
1.5
T
j
= 25°C
-
T
j
= 175°C
-
1.9
V
1.85
-
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© 2021 ROHM Co., Ltd. All rights reserved.
2/13
2021.12 - Rev.B
Datasheet