PCDD0465G1
September 15,2021 PCDD0465G1-REV.00 Page 1
Silicon Carbide Schottky Barrier Diode
TO-252AA
Features
Temperature Independent Switching Behavior
High Surge Current Capability
Positive Temperature Coefficient on V
F
Low Conduction Loss
Zero Reverse Recovery
High junction temperature 175
o
C
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: TO-252AA molded plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0113 ounces, 0.3217 grams
Application
PFC, UPS, PV Inverter, Welder
Maximum Ratings and Thermal Characteristics (T
C
= 25
o
C unless otherwise specified)
PARAMETER
SYMBOL
LIMIT
UNITS
Repetitive Peak Reverse Voltage
V
RRM
650
V
DC Blocking Voltage
V
DC
650
V
Continuous Forward Current
T
C
= 155
o
C
I
F
4
A
Repetitive Peak Surge Current
Half Sine Wave, D=0.1
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FRM
20
16
A
Peak Forward Surge Current
Half Sine Wave
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FSM
20
16
A
Peak Forward Surge Current
t
p
=10us, Pulse
280
A
Maximum Power Dissipation
P
total
46
W
Operating Junction Temperature Range
T
J
-55~175
o
C
Storage Temperature Range
T
STG
-55~175
o
C
V
RRM
V
F(Typ.)
I
F
Q
C
③
①
o
②
PCDD0465G1
September 15,2021 PCDD0465G1-REV.00 Page 2
Electrical Characteristics (Tc
= 25
o
C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Forward Voltage Drop
V
F
I
F
= 4 A, T
J
= 25
o
C
-
1.5
1.7
V
I
F
= 4 A, T
J
= 175
o
C
-
1.8
-
Reverse Leakage Current
I
R
V
R
= 650 V, T
J
= 25
o
C
-
2
40
μA
V
R
= 650 V, T
J
= 175
o
C
-
0.02
-
mA
Total Capacitive Charge
Q
C
I
F
= 4 A, V
R
= 400V
-
6.4
-
nC
Total Capacitance
C
V
R
= 1V, f = 1MHz
-
146
-
pF
V
R
= 200V, f = 1MHz
-
9.9
-
pF
V
R
= 400V, f = 1MHz
-
6.2
-
pF
Capacitance Stored Energy
E
C
V
R
= 400V
-
0.8
-
μJ
Thermal Resistance
R
θJC
-
3.26
-
o
C/W