AiT Semiconductor Inc.
www.ait-ic.com
SM712
TVS
400W ASYMMETRICAL TVS DIODE ARRAY
REV1.0 - NOV 2021 RELEASED - - 1 -
DESCRIPTION
FEATURES
The SM712 transient voltage suppressor (TVS)
diode is designed for asymmetrical (12V to 7V)
protection in multi-point data transmission standard
RS-485 applications. The SM712 may be used to
protect devices from transient voltages resulting
from electrostatic discharge (ESD), electrical fast
transients (FET), and lightning. The SM712 features
400 Watts (t
p
=8/20μs) of power handling capability to
accommodate the higher transient voltage levels
which may be expected in extended common mode
applications. This provides higher equipment
reliability and eliminates the “guess work” required
when using zener diodes that are not rated to handle
such transient conditions. The integrated design aids
in reducing voltage over-shoot associated with trace
inductance. The low clamping voltage of the SM712
minimizes the stress on the protected transceiver.
The SM712 is available in SOT-23 package
400 watts peak pulse power (tp=8/20μs)
Transient protection for asymmetrical data lines to
-IEC 61000-4-2 (ESD) ±15kV(air), ±8kV(contact)
-IEC 61000-4-4 (FET) 40A (5/50ns)
-IEC 61000-4-5 (Lightning) 12A (8/20μs)
Protects two +12V to -7V lines
Low capacitance
Low leakage current
Low clamping voltage
Solid-state silicon avalanche technology
High temperature soldering guaranted:260/10s
Available in SOT-23 package
APPLICATIONS
Protection of RS-485 transceivers with extended
Security systems
Automatic Teller Machines (ATMs)
Lighting Control DALI
Communication Equipments
Fieldbus
Modbus
Profibus
DMX512
HFC systems
Networks
ORDERING INFORMATION
Package Type
Part Number
SOT-23
SM712
Note
SPQ: 3,000pcs/Reel
PIN CONFIGURATION
AiT Semiconductor Inc.
www.ait-ic.com
SM712
TVS
400W ASYMMETRICAL TVS DIODE ARRAY
REV1.0 - NOV 2021 RELEASED - - 2 -
ABSOLUTE MAXIMUM RATINGS
P
PP
, Peak Pulse Power (8/20us)
400W
I
PP
, Peak Pulse Current (8/20us)
17A
V
ESD
, ESD per IEC 61000-4-2
Air
±15kV
Contact
±8kV
T
OPT
, Operating Temperature
-55°C~150°C
T
STG
, Storage Temperature
-55°C~150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
amb
=25
Parameter
Symbol
Conditions
Pin 1 or Pin 2 to Pin 3
(12V) TVS
Pin 3 to Pin 1 or Pin 2
(7V) TVS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Reverse Working
Voltage
V
RWM
Pin 3 to 1 or Pin 2 to 1
-
-
12
-
-
7
V
Reverse Breakdown
Voltage
V
BR
I
T
= 1mA
13.3
-
-
7.5
-
-
V
Reverse Leakage
Current
I
R
V
R
= V
RWM
-
-
1
-
-
20
μA
Clamping Voltage 1
V
C1
I
PP
= 5A, t
p
= 8/20μs
-
-
20
-
-
10
V
Clamping Voltage 2
V
C2
I
PP
= 17A, t
p
= 8/20μs
-
-
26
-
-
12
V
Junction Capacitance 1
C
J1
V
R
= 0V, f = 1MHz
-
-
75
-
-
75
pF
Junction Capacitance 2
C
J2
V
R
= V
RWM
, f = 1MHz
-
45
-
-
45
-
pF