www.excelitas.com PVG series Rev.2019-04
DATASHEET
Photon Detection
PVG Series of Single-epitaxial-layer 1550 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Eye-Safe Range Finding
Excelitas Technologies’ PVG series of high power pulsed laser diodes are multi-quantum well devices with active
layers fabricated using advanced MOCVD epitaxial growth techniques. The devices are offered housed in two
convenient hermetic package configurations, either the “S” package, a TO-18 style low inductance package, or the
“R” style, a CD 9 mm outline, providing increased thermal dissipation with the option of accommodating a rear facet
monitor photodiode.
This series of devices are wavelength-centered at 1550nm primarily to take advantage of a significant increase over
AlGaAs and InGaAs lasers in the maximum permitted emission level with respect to Laser Institute of America or
International Electrotechnical Commission (IEC) requirements. It should be possible therefore to incorporate these
diodes into a system and operate them at relatively high average powers within Class I conditions. It is however the
responsibility of the user to certify their equipment as Class I and ensure that it meets the requirements of its
appropriate local regulatory agency.
The output wavelength of this series is well matched to the near peak spectral response of Excelitas InGaAs
photodiodes types C30617H, C30618H, C30619H, C30645H and C30662H, amongst others.
Key Features
Peak power to 100 Watts
Good temperature stability
Range of single element and
stacked devices
Possibility of high peak power
Class I operation
Package options available
High reliability
Applications
Eye-safe Laser Range Finder (LRF)
Optical beacons
Covert illumination
Sensing
Industrial metrology
Laser safety curtains
“Friend or Foe” identification
Available in several package types, the PVG series laser chips feature stripe
widths of 150, 300 and 350 µm and can be stacked to further increase
output power. Other stripe widths and packages options are available upon
request.
www.excelitas.com Page 2 of 8 PVG series Rev.2019-04
PVG Series of 1550 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Eye-safe Range Finding
Table 1 – Characteristics at T
OP
= 23 °C, t
W
= 150 ns, prr = 1 kHz
Parameter
PVGS1S06H
PVGS2S06H
PVGR1S12H
PVGR1S14H
PVGR4S12H
Units
Minimum Optical Power at i
F
P
Omin
5
10
12
12
45
W
Typical Optical Power at i
F
P
Otyp
7
14
14
15
58
W
Peak forward Current
i
F
20
20
40
40
40
A
Typical Optical Power at i
FM
1
P
Otyp.M
13
24
24
27
100
W
Maximum Peak forward Current
1
i
FM
40
40
80
80
80
A
Lasing threshold current, typical
i
TH
0.8
0.8
1.5
1.5
1.5
A
Typical Forward Voltage at i
FM
2
V
F
5.5
8.3
8.6
8.7
15
V
Number of Elements
-
1
2
1
1
4
Emitting area (width x height)
150 x 1.5
150 x 125
300 x 1.5
350 x 1.5
300 x 350
µm
Notes:
1. Operating drive condition under reduced duty factor.
2. Excluding the voltage drop contribution due to the inductive element of the package, as estimated by 𝑉
𝐹
= 𝑅
𝑆
𝑖
𝐹
+ 𝑉
𝑔
.
Table 2 – Generic Electro-Optical Specifications at 23°C
Parameter
Symbol
Min
Typical
Max
Units
Center wavelength of spectral envelope
λ
C
1520
1550
1580
nm
Spectral bandwidth at 50% intensity points
Δλ
13
nm
Wavelength temperature coefficient
Δλ/ΔT
0.5
nm/°C
Beam spread (FWHM) parallel to junction plane
Θ
||
19
degrees
Beam spread (FWHM) perpendicular to junction plane
Θ
|
38
degrees
Table 3 – Maximum Ratings
Parameter
Symbol
Min
Max
Units
Peak reverse voltage
V
RM
2
V
Pulse width
t
W
150
ns
Duty factor
du
0.1
%
Storage temperature
T
S
-55
105
°C
Operating temperature
T
op
-55
85
°C
Soldering for 5 seconds (leads only)
260
°C