SSM3K35FS
2014-03-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35FS
○ High-Speed Switching Applications
○ Analog Switch Applications
• 1.2-V drive
• Low ON-resistance: R
on
= 20 Ω (max) (@V
GS
= 1.2 V)
: R
on
= 8 Ω (max) (@V
GS
= 1.5 V)
: R
on
= 4 Ω (max) (@V
GS
= 2.5 V)
: R
on
= 3 Ω (max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics Symbol Rating Unit
Drain–source voltage V
DSS
20 V
Gate–source voltage V
GSS
±10 V
DC I
D
180
Drain current
Pulse I
DP
360
mA
Drain power dissipation P
D
100 mW
Channel temperature T
ch
150 °C
Storage temperature T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±10 V, V
DS
= 0V ⎯ ⎯ ±10 μA
Drain–source breakdown voltage V
(BR) DSS
I
D
= 0.1 mA, V
GS
= 0V
20 ⎯ ⎯ V
Drain cutoff current I
DSS
V
DS
= 20 V, V
GS
= 0V
⎯ ⎯ 1 μA
Gate threshold voltage V
th
V
DS
= 3 V, I
D
= 1 mA
0.4 ⎯ 1.0 V
Forward transfer admittance ⏐Y
fs
⏐
V
DS
= 3 V, I
D
= 50 mA (Note 1)
115 ⎯ ⎯ mS
I
D
= 50 mA, V
GS
= 4 V (Note 1) ⎯ 1.5 3
I
D
= 50 mA, V
GS
= 2.5 V (Note 1) ⎯ 2 4
I
D
= 5 mA, V
GS
= 1.5 V (Note 1) ⎯ 3 8
Drain–source ON-resistance R
DS (ON)
I
D
= 5 mA, V
GS
= 1.2 V (Note 1) ⎯ 5 20
Ω
Input capacitance C
iss
⎯ 9.5 ⎯
Reverse transfer capacitance C
rss
⎯ 4.1 ⎯
Output capacitance C
oss
V
DS
= 3 V, V
GS
= 0V, f = 1 MHz
⎯ 9.5 ⎯
pF
Turn-on time
t
on
⎯ 115 ⎯
Switching time
Turn-off time
t
off
V
DD
= 3 V, I
D
= 50 mA,
V
GS
= 0 to 2.5 V
⎯
300
⎯
ns
Drain–source forward voltage V
DSF
I
D
= - 180 mA, V
GS
= 0V (Note 1)
⎯ -0.9 -1.2 V
Note 1: Pulse test
Unit: mm
JEDEC -
JEITA -
TOSHIBA 2-2H1B
Weight: 2.4 mg (typ.)
Start of commercial production
2008-02
SSM3K35FS
2014-03-01
2
Switching Time Test Circuit
(a) Test Circuit (b) V
IN
Marking Equivalent Circuit
(top view)
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
)
to below (1 mA for the
SSM3K35FS). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
V
DD
= 3 V
Duty ≤ 1%
V
IN
: t
r
, t
f
< 5 ns
(Z
out
= 50 Ω)
Common Source
Ta = 25°C
V
DD
OUT
IN
2.5 V
0
10 μs
50 Ω
R
L
(c) V
OUT
t
on
90%
10%
0 V
2.5 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS
(
ON
)
KZ
1 2
3
1 2
3