SSM3J36FS
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J36FS
○ Power Management Switches
• 1.5-V drive
• Low ON-resistance: R
on
= 3.60 Ω (max) (@V
GS
= -1.5 V)
: R
on
= 2.70 Ω (max) (@V
GS
= -1.8 V)
: R
on
= 1.60 Ω (max) (@V
GS
= -2.8 V)
: R
on
= 1.31 Ω (max) (@V
GS
= -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
-20 V
Gate-source voltage V
GSS
±8 V
DC I
D
-330
Drain current
Pulse I
DP
-660
mA
Drain power dissipation P
D
(Note1) 150 mW
Channel temperature T
ch
150 °C
Storage temperature range
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm
2
×3)
Marking Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
)
to below −1 mA for the
SSM3J36FS). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1B
Weight: 2.4 mg (typ.)
P X
1 2
3
12
3
Start of commercial production
2008-06
SSM3J36FS
2014-03-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Conditions Min Typ. Max Unit
V
(BR) DSS
I
D
= -1 mA, V
GS
= 0 V -20 ⎯ ⎯
Drain-source breakdown voltage
V
(BR) DSX
I
D
= -1 mA, V
GS
= 8 V -12 ⎯ ⎯
V
Drain cutoff current
I
DSS
V
DS
= -16 V, V
GS
= 0 V ⎯ ⎯ -10 μA
Gate leakage current
I
GSS
V
GS
= ±8 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Gate threshold voltage
V
th
V
DS
= -3 V, I
D
= -1 mA -0.3 ⎯ -1.0 V
Forward transfer admittance
|Y
fs
| V
DS
= -3 V, I
D
= -100mA (Note2) 190 ⎯ ⎯ mS
I
D
= -100mA, V
GS
= -4.5 V (Note2) ⎯ 0.95 1.31
I
D
= -80mA, V
GS
= -2.8 V (Note2) ⎯ 1.22 1.60
I
D
= -40mA, V
GS
= -1.8 V (Note2) ⎯ 1.80 2.70
Drain-source ON-resistance R
DS (ON)
I
D
= -30mA, V
GS
= -1.5 V (Note2) ⎯ 2.23 3.60
Ω
Input capacitance
C
iss
⎯ 43 ⎯
Output capacitance
C
oss
⎯ 10.3 ⎯
Reverse transfer capacitance
C
rss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
⎯ 6.1 ⎯
pF
Total Gate Charge
Q
g
⎯ 1.2 ⎯
Gate−Source Charge
Q
gs
⎯ 0.85 ⎯
Gate−Drain Charge
Q
gd
V
DS
= -10 V, I
DS
= -330mA,
V
GS
= -4 V
⎯ 0.35 ⎯
nC
Turn-on time
t
on
⎯ 90 ⎯
Switching time
Turn-off time t
off
V
DD
= -10 V, I
D
= -100mA
V
GS
= 0 to -2.5 V, R
G
= 50Ω
⎯
200
⎯
ns
Drain-source forward voltage V
DSF
I
D
=330mA, V
GS
= 0 V (Note2)
⎯
0.88 1.2 V
Note2: Pulse test
Switching Time Test Circuit
(c) V
OUT
t
on
90%
10%
−2.5 V
0 V
90%
10%
t
off
t
r
t
f
V
DS
(
ON
)
V
DD
(b) V
IN
V
DD
= −10 V
Duty
≤
1%
V
IN
: t
r
, t
f
< 5 ns
(Z
out
= 50 Ω)
Common Source
Ta = 25°C
IN
0
−
2.5V
10 μs
V
DD
OUT
R
G
R
L
(a) Test circuit