QX7N65FF, QX7N65FD
FEATURES
⚫ Fast switching
⚫ 100% avalanche tested
⚫ Improved dv/dt capability
APPLICATIONS
⚫ Switch Mode Power Supply (SMPS)
⚫ Uninterruptible Power Supply (UPS)
⚫ Power Factor Correction (PFC)
Device
Marking and Package Information
Device Package Marking
QX7N65FF TO-220F QX7N65FF
QX7N65FD TO-252 QX7N65FD
Absolute
Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
TO-220F TO-252
Drain
-Source Voltage (V
GS
= 0V) V
DSS
650 V
Cont
inuous Drain Current I
D
7 A
Pulsed Drain Current (note1)
I
DM
28 A
Gate
-Source Voltage V
GSS
±30
V
Single Pulse Avalanche Energy (note2)
E
AS
180 mJ
Avalanche Current (note1)
I
AS
6 A
Repetitive Avalanche Energy (note1)
E
AR
108 mJ
Power Dissipation (T
C
= 25ºC) P
D
63 97 W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150 ºC
Thermal Resistance
Parameter Symbol
Value
Unit
TO-220F TO-252
Thermal Resistance, Junction-to-Case R
thJC
1.98 1.29
ºC /W
Thermal Resistance, Junction-to-Ambient R
thJA
62.5 60
650V N-Channel MOSFET
www.qxmicro.com- 1
Specifications
T
J
= 25ºC , unless otherwise noted
Parameter
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0V, I
D
= 250µA 650 -- -- V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC -- -- 1 μA
Gate-Source Leakage I
GSS
V
GS
= ±30V
-- --
±100
nA
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 3.0 -- 4.0 V
Drain-Source On-Resistance (Note3) R
DS(on)
V
GS
= 10V, I
D
= 3.5A -- 1.1 1.35 Ω
Dynamic
Input Capacitance C
iss
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
-- 956 --
pF
Output Capacitance C
oss
-- 89.3 --
Reverse Transfer Capacitance C
rss
-- 1.5 --
Internal Gate Resistance
Rg
-- 2.3 -- Ω
Total Gate Charge Q
g
V
DD
= 520V, I
D
= 7A,
V
GS
= 10V
-- 18 --
nCGate-Source Charge Q
gs
-- 4.8 --
Gate-Drain Charge Q
gd
-- 7.8 --
Turn-on Delay Time t
d(on)
V
DD
= 325V, I
D
= 7A,
R
G
= 25 Ω
-- 40 --
ns
Turn-on Rise Time t
r
-- 16.3 --
Turn-off Delay Time t
d(off)
-- 93.6 --
Turn-off Fall Time t
f
-- 32 --
Drain-Source Body Diode Characteristics
Continuous Body Diode Current I
S
T
C
= 25 ºC
-- -- 7
A
Pulsed Diode Forward Current I
SM
-- -- 28
Body Diode Voltage V
SD
T
J
= 25ºC, I
SD
= 3.5A, V
GS
= 0V -- -- 1.2 V
Reverse Recovery Time t
rr
VR=325V,I
S
= 7A,
di
F
/dt =100A /μs
-- 281 -- ns
Reverse Recovery Charge Q
rr
-- 2.5 -- μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=10mH, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
QX7N65FF, QX7N65FD
650V
N-Channel MOSFET
www.qxmicro.com- 2