Top view (pads down)
OUT GND3
GND4 GND2
IN GND1
Features
Integrated impedance matching to STM32WB55Vx
LGA footprint compatible
50 Ω nominal impedance on antenna side
Deep rejection harmonics filter
Low insertion loss
Small footprint
Low thickness ≤ 450 μm
High RF performance
RF BOM and area reduction
ECOPACK2 compliant component
Applications
Bluetooth 5
OpenThread
Zigbee®
IEEE 802.15.4
Optimized for STM32WB55Vx
Description
The MLPF-WB55-02E3 integrates an impedance matching network and harmonics
filter. The matching impedance network has been tailored to maximize the RF
performance of STM32WB55Vx. This device uses STMicroelectronics IPD
technology on non-conductive glass substrate which optimizes RF performance.
Product status link
MLPF-WB55-02E3
2.4 GHz low pass filter matched to STM32WB55Vx
MLPF-WB55-02E3
Datasheet
DS13176 - Rev 2 - January 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
IN
Input power RF
IN
10 dBm
V
ESD
ESD ratings human body model (JESD22-A114-C), all I/O one at a time while
others connected to GND
2000
V
ESD ratings machine model, all I/O 200
T
OP
Maximum operating temperature -40 to +105 °C
Table 2. Impedances(T
amb
= 25 °C)
Symbol Parameter
Value
Unit
Min. Typ. Max.
Z
IN
STM32WB55xx single-ended
impedance
-
matched to
STM32WB55Vx
-
Z
OUT
Antenna impedance - 50 -
Table 3. Electrical characteristics and RF performance (T
amb
= 25 °C)
Symbol
Parameter
Value
Unit
Min. Typ. Max.
f Frequency range 2400 2500 MHz
IL
Insertion loss lS
21
l
1.0 1.2 dB
RL
IN
Input return loss IS
11
I
13 17 dB
RL
OUT
Output return loss lS
22
l
15 18 dB
Att
Harmonic rejection
levels IS
21
I
Attenuation at 2fo
(4800-5825) MHz
43 45 dB
Attenuation at 3fo
(7200 – 7500) MHz
47 53 dB
Attenuation at 4fo
(9600 – 10000) MHz
41 56 dB
Attenuation at 5fo
(12000 – 12500) MHz
38 44 dB
MLPF-WB55-02E3
Characteristics
DS13176 - Rev 2
page 2/14