QXA7N65H, QXP7N65H, QXD7N65H, QXU7N65H
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device Package Marking
QXA7N65H
TO-220F A7N65H
QXP7N65H
TO-220 P7N65H
QXD7N65H
TO-252 D7N65H
QXU7N65H
TO-251 U7N65H
Absolute Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
TO-220F
TO-251
TO-252
TO-220
Drain-Source Voltage (V
GS
= 0V)
V
DSS
650
V
Continuous Drain Current
I
D
7
A
Pulsed Drain Current (note1)
I
DM
28
A
Gate-Source Voltage
V
GSS
±30
V
Single Pulse Avalanche Energy (note2)
E
AS
198
mJ
Avalanche Current (note1)
I
AR
3.5
A
Repetitive Avalanche Energy (note1)
E
AR
40
mJ
Power Dissipation (T
C
= 25ºC)
P
D
63
97
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
ºC
Parameter
Symbol
Value
Unit
TO-220F
TO-251
TO-252
TO-220
Thermal Resistance, Junction-to-Case
R
thJC
1.98
1.29
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
62.5
60
650V N-Channel MOSFET
www.qxmicro.com
- 1
Specifications T
J
= 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
650
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
--
--
1
μA
Gate-Source Leakage
I
GSS
V
GS
= ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
3.0
--
4.0
V
Drain-Source On-Resistance (Note3)
R
DS(on)
V
GS
= 10V, I
D
= 3.5A
--
1.1
1.35
Ω
Dynamic
Input Capacitance
C
iss
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
891
--
pF
Output Capacitance
C
oss
--
110
--
Reverse Transfer Capacitance
C
rss
--
14
--
Total Gate Charge
Q
g
V
DD
= 520V, I
D
= 7A,
V
GS
= 10V
--
22
--
nC
Gate-Source Charge
Q
gs
--
4.3
--
Gate-Drain Charge
Q
gd
--
13
--
Turn-on Delay Time
t
d(on)
V
DD
= 325V, I
D
= 7A,
R
G
= 25 Ω
--
15
--
ns
Turn-on Rise Time
t
r
--
18
--
Turn-off Delay Time
t
d(off)
--
80
--
Turn-off Fall Time
t
f
--
35
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C
= 25 ºC
--
--
7.0
A
Pulsed Diode Forward Current
I
SM
--
--
28
Body Diode Voltage
V
SD
T
J
= 25ºC, I
SD
= 7A, V
GS
= 0V
--
--
1.4
V
Reverse Recovery Time
t
rr
V
GS
= 0V,I
S
= 7A,
di
F
/dt =100A /μs
--
300
--
ns
Reverse Recovery Charge
Q
rr
--
4.1
--
μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 4.5A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
QXA7N65H, QXP7N65H, QXD7N65H, QXU7N65H
650V
N-Channel MOSFET
www.qxmicro.com
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