ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Tstg
P
D
C
C
NPN
General
Purpose
Transistors
(Ta=25 C)
40
5.0
500
25
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T
j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 0.1 mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
= 100 µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
= 100 µAdc, I
C
=0)
Collector Cutoff Current (V
CE
= 20 Vdc, I =0)
Collector Cutoff Current (V
CB
= 40 Vdc, I
E
=0)
Emitter Cutoff Current (V
EB
= 3.0V c, I =0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CE0
I
CBO
I
EBO
5.0
-
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
25
40
0.1
0.1
d
B
C
S8050
1
www.slkormicro.com
Current-Gain-Bandwidth Product
(I
C
= 20 mAdc, V
CE
=6.0 Vdc, f=30MHz)
f
T
MHz
Collector-Emitter Saturation Voltage
(I
C
= 500 Adc, I
B
= 50 mAdc)
Base-Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
h
FE
h
FE
V
CE(sat)
V
BE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
UnitMin
Max
-
-
-
-
-
-
-
150
-
-
(I
C
= 50 Adc, V
CE=1.0 Vdc
)
DC Current Gain
DC Current Gain
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
85 300
(1)
(2)
50
0.6
1.2
-
Classification of h
FE(1)
Rank
B
C
D
Range
85-160
120-200 160-300
TYP
-
S8050
2
www.slkormicro.com