P
P
P
P-Channel
-Channel
-Channel
-ChannelEnhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-ModeMOS
MOS
MOS
MOSFETs
FETs
FETs
FETs
MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUMRATINGS
RATINGS
RATINGS
RATINGS
THERMAL
THERMAL
THERMAL
THERMALCHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CharacteristicSymbolMaxUnit
Drain-SourceV oltage
BV
DSS
-50V
Gate-SourceV oltage
V
GS
+2
0
V
DrainCurrent(continuous)
I
DR
-130
mA
DrainCurrent(pulsed)
I
DRM
-520mA
Characteristic
SymbolMaxUnit
TotalDeviceDissipation
T
A
=25℃
Derateabove25℃
P
D200
1.8
mW
mW/℃
ThermalResistanceJunctiontoAmbient
R
Θ
JA
350℃/W
JunctionandStorageTemperature
T
J
,T
stg
150℃,-55to+150℃
BSS84
1
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ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
(T
A
=25℃unlessotherwisenoted)
1.FR-5=1.0×0.75×0.062in.
2.Alumina=0.4×0.3×0.024in.99.5%alumina.
3.PulseWidth<300
μs;DutyCycle<2.0%.
CharacteristicSymbolMinTypMaxUnit
Drain-SourceBreakdownV oltage
(I
D
=-250u
A,
V
GS
=0V)
BV
DSS
-50
——
V
GateThresholdV oltage
(I
D
=-250u
A,
V
GS
=V
DS
)
V
GS
(
th
)
-1.0
—-2.5
V
DiodeForwardV oltageDrop
(I
SD
=-200m
A,
V
GS
=0V)
V
SD
—
—-1.5
V
ZeroGateV oltageDrainCurrent
(V
GS
=0
V,
V
DS
=-50V)
(V
GS
=0
V,
V
DS
=-50V,T
A
=125℃)
I
DSS
——-15
-60
uA
GateBodyLeakage
(V
GS
=+20
V,
V
DS
=0V)
I
GSS
——+10nA
StaticDrain-SourceOn-StateResistance
(I
D
=-100m
A,
V
GS
=-5V)
R
DS
(
ON
)
——10Ω
InputCapacitance
(V
GS
=0
V,
V
DS
=-25
V,
f=1MHz)
C
ISS
—73—pF
CommonSourceOutputCapacitance
(V
GS
=0
V,
V
DS
=-25
V,
f=1MHz)
C
OSS
—10—pF
Turn-ONTime
(V
DS
=-30
V,
I
D
=-270mA,R
GEN
=6Ω)
t
(on)
——5ns
Turn-OFFTime
(V
DS
=-30
V,
I
D
=-270mA,R
GEN
=6Ω)
t
(off)
——20ns
ReverseRecoveryTime
(I
SD
=-100mA,V
GS
=0V)
t
rr
—10—ns
BSS84
2
www.slkormicro.com