NPN General Purpose Transistors
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS
(T
A
=25ËšC unless otherwise noted)
Characteristics
Symbol
Unit
Min Typ
Max
Collector cut-off current
Emitter cut-off current
V
CE
=20V, I
E
=0
V
CB
=40V, I
E
=0
Emitter cut-off current
V
EB
=5V, I
C
=0
I
CBO
I
CEO
I
EBO
-
-
µA
µA
0.1
0.1
-
µA
0.1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
C
=0.1mA, I
B
=0
I
C
=100µA, I
E
=0
Emitter Base Breakdown Voltage
I
E
=100µA, I
C
=0
V
(BR)CBO
V
(BR)CEO
40
25
V
V
-
-
V
(BR)EBO
5
-
-
-
-
-
-
V
-
MAXIMUM RATINGS
(T
A
=25ËšC unless otherwise noted)
Junction and Storage, Temperature
T
J
,T
stg
-55 to +150 °C
Collector Current-Continuous
I
C
1.5
A
Total Device Dissipation T
A
=25°C
P
D
1.0
W
Emitter-Base Voltage
V
EBO
5
V
Collector-Emitter Voltage
V
CEO
25
V
Collector-Base Voltage
Rating Symbol Value Unit
V
CBO
40
V
SS8050
1
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DYNAMIC CHARACTERISTICS
Transition frequency
V
CE
=10 V, I
C
=50 mA, f=30MHz
f
T
100
-
DC Current Gain
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
Base-Emitter ON Voltage
V
CE
=1V, I
C
=10mA)
h
FE
V
CE(sat)
V
BE(sat)
-
-
-
-
V
V
ON CHARACTERISTICS
(1)
h
FE
(2)
85
40
400
MHz
CLASSIFICATION OF h
FE(2)
Rank
Range
CB D E
85-160 120-200 160-300
300-400
0.5
1.2
V
BE(ON)
-
-
-
-
-
-
V
1
2
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SS8050