MAXIMUM

MAXIMUM

MAXIMUM

MAXIMUMRATINGS

RATINGS

RATINGS

RATINGS

CharacteristicSymbolMaxUnit

Drain-SourceVoltage

BV

DSS

20V

Gate-SourceV oltage

V

GS

+

10

V

DrainCurrent(continuous)

I

D

4

A

DrainCurrent(pulsed)

I

DM

15A

TotalDeviceDissipation

T

A

=

25

℃

P

D

1200mW

Junction

T

J

150℃

SolderTemperature/SolderTime

T/t

260/10℃/S

StorageTemperature

T

stg

-55to+150℃

SL2306

N-Channel

Power MOSFET

1

www.slkormicro.com

(T

A

=25℃unlessotherwisenoted)

CharacteristicSymbolMinTypMaxUnit

Drain-SourceBreakdownVoltage

(I

D

=250uA,V

GS

=0V)

BV

DSS

20

——

V

GateThresholdV oltage

(I

D

=250uA,V

GS

=V

DS

)

V

GS(th)

0.5

—1.5

V

DiodeForwardV oltageDrop

(I

S

=0.75A,V

GS

=0V)

V

SD

—

—1.5

V

ZeroGateVoltageDrainCurrent

(V

GS

=0

V,

V

DS

=16V)

(V

GS

=0

V,

V

DS

=

16V

,T

A

=55℃)

I

DSS

——1

10

uA

GateBodyLeakage

(V

GS

=+8

V,

V

DS

=0V)

I

GSS

——+100nA

StaticDrain-SourceOn-StateResistance

(I

D

=4A,V

GS

=4.5V)

R

DS(ON)

—3040mΩ

StaticDrain-SourceOn-StateResistance

(I

D

=2A,V

GS

=2.5V)

R

DS(ON)

—4560mΩ

InputCapacitance

(V

GS

=0

V,

V

DS

=10

V,

f=1MHz)

C

ISS

—600—pF

OutputCapacitance

(V

GS

=0

V,

V

DS

=10

V,

f=1MHz)

C

OSS

—120—pF

Turn-ONTime

(V

DS

=10

V,

I

D

=3A,R

GEN

=6Ω)

t

(on)

—8—ns

Turn-OFFTime

(V

DS

=10

V,

I

D

=3A,R

GEN

=6Ω)

t

(off)

—60—ns

PulseWidth<300μs;DutyCycle<2.0%

SL2306

2

www.slkormicro.com

ELECTRICAL CHARACTERISTICS