NPN GENERAL PURPOSE SWITCHING TRANSISTOR
45Volts
300mWatts
VOLTAGE
POWER
FEATURES
MECHANICAL DATA
J6
1
2
3
C
B E
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
S9014
NPN epitaxial silicon, planar design.
Collector-emitter voltage VCE=45V.
Collector current IC=0.1A.
Transition frequency fT>150MHz @
IC=10mAdc, VCE=5Vdc, f=30MHz.
In compliance with ER RoHS 2002/95/EC
directives.
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750,
method 2026
Approx. Weight: 0.008gram
Marking: J6
Symbol Parameter Vaule Unit
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 0.1 A
PD Total Device Dissipation 0.3 W
RθJA Thermal Resistance Form Junction to Ambient 625
O
C/W
TJ Junction Temperature 150
O
C
TSTG Storage Temperature -55~+150
O
C
PAGE.2
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
*Pulse Test: Pulse Width<300uS, Duty Cycle<2.0%.
S9014
Parameter Symbol Test Condition Min. Typ.Max.Units
Collector-Base breakdown voltage V(BR)CBO IC=100uA,IE=0 50 V
Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V
Emitter-Base breakdown voltage V(BR)EBO IE=100uA,IC=0 5 V
Collector cut-off current ICBO VCB=45V,IC=0 0.1 uA
Collector cut-off current ICEX 0.1 uA
Base cut-off current IBEX 0.1 uA
Emitter cut-off current IEBO VEB=3V,IC=0 0.1 uA
DC current gain* HFE IC=1mA,VCE=5V 200 600
IC=20mA,IB=1mA 0.2 V
IC=100mA,IB=5mA 0.3 V
IC=20mA,IB=1mA 0.85 V
IC=100mA,IB=5mA 0.95 V
Input capacitance CIB VCB=5V,IE=0,f=1MHZ 4.0 pF
Output capacitance COB VEB=0.5V,IC=0,f=1MHZ 8.0 pF
Transition ferquency fT
IC=10mA,VCE=5V,
f=30MHZ
150 MHZ
Delay time td 35 nS
Rise time tr 35 nS
Storage time ts 200 nS
Fall time tf 50 nS
VCC=3V,VBE=-0.5V,
IC=10mA,IB=1mA
VCC=3V,VBE=-0.5V,
IB1=IB2=1mA
VCE=35V,IB=0
Collector-Emitter saturation voltage VCE(SAT)
VBE(SAT)Base-Emitter Saturation voltage*