P3D12005BD 1200V SiC Schottky Diode
Chip
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Ver. 1.0 Feb. 2021
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SiC SBD P3D12005BD
Features
• 1200-Volt Schottky Rectifier
• Ultra-Fast Switching
• Zero Reverse Recovery Current
• High-Frequency Operation
•
Positive Temperature Coefficient on V
F
Order Information
Part number
Die size
P3D12005BD
1.3 X 1.8 mm
2
1. Maximum Ratings
At T
J
= 25℃, unless specified otherwise
V
RRM
=
V
I
F
(≦160℃)
=
A
Qc
=
nC
Parameter
Symbol
Value
Unit
Test condition
Repetitive Peak Reverse
Voltage
V
RRM
1200
V
T
C
= 25℃
Surge Peak Reverse
Voltage
V
RSM
1200
V
T
C
= 25℃
DC Blocking Voltage
V
R
1200
V
T
C
= 25℃
Forward Current
I
F
5
A
T
C
= 160℃
Operating Junction and
Storage Temperature
T
J
,
T
STG
-55 to +175
℃
nwww.pnjsemi.com
Ver. 1.0 Feb. 2021
Page 2 of 3
P3D12005BD 1200V SiC Schottky Diode
Chip
2. Electrical Characteristics
At T
J
= 25℃, unless specified otherwise
Parameter
Symbol
Values
Unit
Test condition
Min.
Typ.
Max.
Forward Voltage
V
F
/
1.42
1.8
V
I
F
= 5A, T
J
= 25℃
2.1
/
I
F
= 5A, T
J
= 175℃
Reverse Current
I
R
/
1.73
44
µA
V
R
= 1200V, T
J
= 25℃
149
/
V
R
= 1200V, T
J
= 175℃
Total Capacitance
C
/
298
/
pF
V
R
= 0V, T
J
= 25℃
f=
1MHz
32
V
R
= 400V, T
J
= 25℃
f= 1MHz
30
V
R
= 800V, T
J
= 25℃
f= 1MHz
Total Capacitive
Charge
Q
C
/
32
/
nC
V
R
= 800V, I
F
= 5A
di/dt= 500A/μs
T
J
=
25℃
Capacitance
Stored Energy
E
C
/
9.79
/
μJ
V
R
= 800V
3. Mechanical Parameters
Parameter
Typical Value
Unit
Die Dimensions without Scribe
Line (L x W)
1.3 X 1.8
mm
Scribe Line Width
80
μm
Exposed Anode Pad Metal
Dimensions Each
0.97 X 1.46
mm
Die Thickness
175±10%
μm
Anode Metallization (AlCu)
5
μm
Cathode Metallization (Ti/Ni/Ag)
1
μm